BU406FI Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU406FI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 18 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220F
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BU406FI datasheet
..1. Size:211K inchange semiconductor
bu406fi bu407fi.pdf 
isc Silicon NPN Power Transistors BU406FI/407FI DESCRIPTION High Voltage Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regulators and motor control systems etc. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.1. Size:141K inchange semiconductor
bu406f bu407f.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BU406F/407F DESCRIPTION High Voltage Fast Switching Speed- toff= 0.75 s (Max) Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS Designed for use in converters, inverters, switching regulators and motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S
9.1. Size:100K motorola
bu406 bu407.pdf
Order this document MOTOROLA by BU406/D SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV s and CRT s. 7 AMPERES NPN SILICON High Voltage VCEV = 330 or 400 V POWER TRANSISTORS Fast Switching Speed tf = 750 ns (max)
9.2. Size:66K st
bu406d bu407d.pdf
BU406D BU407D SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TV 3 2 1 TO-220 DESCRIPTION The BU406D and BU407D are silicon planar epitaxial NPN transistors with integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, devices for us
9.3. Size:58K st
bu406.pdf
BU406 SILICON NPN SWITCHING TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TV 3 DESCRIPTION 2 1 The BU406 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package. TO-220 It is a fast switching device for use in horizontal deflection output stages of la
9.4. Size:45K fairchild semi
bu406 bu406h bu408 bu406 bu408.pdf
BU406/406H/408 High Voltage Switching Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Co
9.5. Size:61K samsung
bu406 bu406 bu406h bu408 sam.pdf
BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TO-220 USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current
9.6. Size:282K onsemi
bu406 bu406tu.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.7. Size:81K onsemi
bu406 bu407.pdf
BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV s and CRT s. Features High Voltage www.onsemi.com Fast Switching Speed Low Saturation Voltage NPN SILICON These Devices are Pb-Free and are RoHS Compliant* POWER TRANSISTORS 7 AMPERES - 60 WATTS MAXIMUM RATINGS 150 AND 200 VOLT
9.8. Size:207K utc
bu406.pdf
UNISONIC TECHNOLOGIES CO., LTD BU406 NPN PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110 C CRT. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2
9.9. Size:361K cdil
bu406 bu407.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages of TV and CRT ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL BU406 BU407 UNIT Collector Emitter Voltage VCEO 200 150 V Collector Base Voltage VCBO 400 330 V VCEV Collector Emitter Volta
9.10. Size:627K jiangsu
bu406.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors BU406 TRANSISTOR (NPN) TO-220-3L FEATURES High Voltage 1. BASE Fast Switching Speed tf = 750 ns (max) 2. COLLECTOR Low Saturation Voltage VCE(sat) = 1 V (max) @ 5 A Pb-Free Packages are Available* 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Sy
9.11. Size:733K jilin sino
bu406.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R BU406 MAIN CHARACTERISTICS Package I 7A C V 200V CEO P (IPAK) 35W C P (TO-220/220C/263) 60W C P (TO-3PB) 120W C TO-3PB APPLICATIONS TO-220C High frequency switching power supply High frequenc
9.12. Size:910K blue-rocket-elect
bu406s.pdf
BU406S(BR3DA406SR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features High voltage. / Applications High voltage switching and humidifier. / Equivalent Circuit / Pinning 1 2
9.13. Size:147K shantou-huashan
hbu406h.pdf
NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU406H APPLICATIONS High Voltage Swltching . ABSOLUTE MAXIMUM RATINGS Ta=25 TO-220 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation
9.15. Size:151K crhj
bu406a8.pdf
NPN R BU406 A8 BU406 A8 NPN VCEO 100 V IC 7 A Ptot TC=25 60 W
9.16. Size:151K crhj
bu406 a8.pdf
NPN R BU406 A8 BU406 A8 NPN VCEO 100 V IC 7 A Ptot TC=25 60 W
9.17. Size:490K feihonltd
bu406b.pdf
TRANSISTOR BU406B MAIN CHARACTERISTICS FEATURES IC 6A Epitaxial silicon VCEO 150V High switching speed PC 65W High current capability RoHS RoHS product APPLICATIONS High frequency switching power supply High frequency power transform
9.18. Size:504K feihonltd
bu406a.pdf
TRANSISTOR BU406A MAIN CHARACTERISTICS FEATURES Epitaxial silicon IC 7A VCEO 200V High switching speed High current capability PC 60W RoHS RoHS product APPLICATIONS High frequency switching power supply High frequency power transform
9.19. Size:1724K slkor
bu406.pdf
BU406 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR FEATURES High Voltage Fast Switching Speed tf = 750 ns (max) Low Saturation Voltage VCE(sat) = 1 V (max) @ 5 A Pb-Free Packages are Available* MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V Collector-Emitter Voltage 200 VCEO V VEBO Emitter
9.20. Size:1553K cn sps
bu406dt9tl.pdf
BU406DT9TL Silicon NPN Power Transistor DESCRIPTION High Voltage V = 400V(Min) CEV Low Saturation Voltage- V = 1.0V(Max.)@ I = 5A CE(sat) C APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 200 V CEO P
9.21. Size:1277K cn sps
bu406t1tl.pdf
BU406T1TL Silicon NPN Power Transistor DESCRIPTION High Voltage V = 400V(Min) CEV Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEV V C
9.22. Size:420K cn sptech
bu406.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU406 DESCRIPTION High Voltage V = 400V(Min) CEV Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector
9.23. Size:584K cn sptech
bu406d.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU406D DESCRIPTION High Voltage V = 400V(Min) CEV Low Saturation Voltage- V = 1.0V(Max.)@ I = 5A CE(sat) C APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collect
9.24. Size:211K inchange semiconductor
bu406h.pdf
isc Silicon NPN Power Transistor BU406H DESCRIPTION High Voltage V = 400V(Min) CEV Low Saturation Voltage- V = 1.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
9.25. Size:61K inchange semiconductor
bu406d bu407d.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION With TO-220C package High voltage Fast switching speed Low saturation voltage Built-in damper diode APPLICATIONS For use in horizontal deflection output stages of TV s and CTV s circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 moun
9.26. Size:134K inchange semiconductor
bu406.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU406 DESCRIPTION High Voltage VCEV= 400V(Min) Fast Switching Speed- tf= 750ns(Max) Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME
9.27. Size:212K inchange semiconductor
bu406d.pdf
isc Silicon NPN Power Transistor BU406D DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 0.75 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXI
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