BUT11AI Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUT11AI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 450 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 14
Encapsulados: TO220
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BUT11AI datasheet
..1. Size:18K philips
but11ai.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS T
..2. Size:18K philips
but11ai 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS T
..3. Size:209K inchange semiconductor
but11ai.pdf
isc Silicon NPN Power Transistor BUT11AI DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter
8.1. Size:120K motorola
but11afr.pdf
Order this document MOTOROLA by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor POWER TRANSISTOR 5.0 AMPERES For Isolated Package Applications 450 VOLTS 40 WATTS The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabric
8.2. Size:60K philips
but11apx.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati
8.3. Size:110K philips
but11ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volta
8.4. Size:122K philips
but11ax.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volta
8.5. Size:105K philips
but11af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
8.6. Size:66K st
but11a.pdf
BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS FLYBACK AND FORWARD SINGLE 3 2 TRANSISTOR LOW POWER CONVERTERS 1 TO-220 DESCRIPTION The BUT11A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switch
8.7. Size:42K fairchild semi
but11a but11.pdf
BUT11/11A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage V BUT11 850 BUT11A 1000 VCEO Collector-Emitter Voltage V BUT11 400 BUT11A 450 VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP
8.8. Size:47K fairchild semi
but11af but11f.pdf
BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BUT11F 850 V BUT11AF 1000 V VCEO Collector-Emitter Voltage BUT11F 400 V BUT11AF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC
8.9. Size:159K onsemi
but11 but11a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.10. Size:226K inchange semiconductor
but11apx.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450
8.11. Size:194K inchange semiconductor
but11a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitt
8.12. Size:223K inchange semiconductor
but11afi.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450
8.13. Size:159K inchange semiconductor
but11af.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF DESCRIPTION High Voltage High Speed Switching APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Em
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