3DD164F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3DD164F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO-3
Búsqueda de reemplazo de 3DD164F
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3DD164F datasheet
..1. Size:232K inchange semiconductor
3dd164f.pdf 

isc Silicon NPN Power Transistor 3DD164F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
8.1. Size:127K china
3dd164.pdf 

3DD164 NPN A B C D E F G PCM TC=75 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=5
9.1. Size:123K china
3dd167.pdf 

3DD167 NPN A B C D E F G PCM TC=75 150 W ICM 15 A Tjm 175 Tstg -55 150 VCE=10V Rth 0.66 /W IC=5A V(BR)CBO ICB=5mA 80 150 200 250 350 400 600 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 400 V V(BR)EBO IEB=5mA 5.0 V ICBO VC
9.2. Size:138K china
3dd162-s.pdf 

3DD162-S NPN PCM Tc=25 75 W ICM 5 A Tjm 175 Tstg -55 150 VCE=10V Rth 2.0 /W Ic=1.5A 25 Tc 75 V(BR)CBO ICB=5mA 80 V V(BR)CEO ICE=5mA 80 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=80V, 50 A ICEO VCE=70V 1.0 mA IEBO VEB=5.0V 0.5 m
9.3. Size:27K shaanxi
3dd162.pdf 

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD162(3DD163) NPN Silicon Low Frequency High Power Transistor Features 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ8
9.4. Size:193K inchange semiconductor
3dd167e.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
9.5. Size:193K inchange semiconductor
3dd167d.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167D DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
9.6. Size:193K inchange semiconductor
3dd167f.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167F DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
9.7. Size:193K inchange semiconductor
3dd167c.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167C DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
9.8. Size:193K inchange semiconductor
3dd167a.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167A DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
9.9. Size:193K inchange semiconductor
3dd167b.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD167B DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 )
Otros transistores... 2N3055B, 2SC3907S, 2T837A, 3CD3C, 3DA27C, 3DA608, 3DA98A, 3DA98B, TIP127, BFG540-X, BFP196W, BFR182TW, BU506A, BU941ZL, BUV26G, DK151G, DS15