2SA1153 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1153
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.6 W
Tensión colector-base (Vcb): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SA1153
2SA1153 Datasheet (PDF)
2sa1150.pdf
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2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit: mm High hFE: h = 100~320 FE Complementary to 2SC2710. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO -5 VCollector current I
2sa1162-o 2sa1162-y 2sa1162-gr.pdf
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2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70 to 400 Low noise: NF = 1dB (typ.), 10dB (max) Complementar
2sa1162.pdf
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2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 70~400 Low noise: NF = 1dB (typ.), 10dB (max) Complementary t
2sa1163.pdf
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2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = -120 V Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SC2713 Small package Abs
2sa1163gr 2sa1163bl.pdf
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2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit: mm AEC-Q101 Qualified (Note1). High voltage: V = -120 V CEO Excellent h linearity: h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High h h = 200 to 700 FE: FE Low noise: NF = 1 dB (typ.), 10 dB (max)
2sa1182.pdf
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2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity: hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC2859. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCol
2sa1145.pdf
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2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC2705. Small Collector Output Capacitance: Cob = 2.5 pF (typ.) High Transition Frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -150 VColl
2sa1179n 2sc2812n.pdf
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Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond
2sa1179 2sa1179n.pdf
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No. N71982SA1179N / 2SC2812NNo. N719872602PNP / NPN 2SA1179N / 2SC2812N 2SA1179N Absolu
2sa1177.pdf
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Ordering number:ENN851HPNP Epitaxial Planar Silicon Transistor2SA1177HF Amp ApplicationsUse Package Dimensions Ideally suited for use in FM RF amplifiers, mixers,unit:mmoscillators, converters, IF amplifiers.2033A[2SA1177]2.24.0Features High fT (230MHz typ.) and small Cre (1.1 pF typ.). Small NF (2.5dB typ.). 0.40.50.40.41 2 31.3 1.31 : Emitter
r07ds0271ej 2sa1121-1.pdf
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Preliminary Datasheet R07DS0271EJ03002SA1121 (Previous: REJ03G0636-0200)Rev.3.00Silicon PNP Epitaxial Mar 28, 2011Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec
2sa1129.pdf
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DATA SHEETSILICON POWER TRANSISTOR2SA1129PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SA1129 is a mold power transistor developed for mid-speed ORDERING INFORMATIONswitching, and is ideal for use as a ramp driver.Part No. Package2SA1129 TO-220ABFEATURES Large current capacity with small package: IC(DC) = -7.0 A(TO-220AB)
2sa1199.pdf
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1162-gr.pdf
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MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang
2sa1162-o.pdf
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MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang
2sa1162-y.pdf
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MCC2SA1162-OTM Micro Commercial Components20736 Marilla Street Chatsworth2SA1162-YMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SA1162-GRFax: (818) 701-4939Features Capable of 0.15Watts of Power Dissipation.PNP Silicon Collector-current: 0.15A Collector-base Voltage: -50V Plastic-Encapsulate Operating and storage junction temperature rang
2sa1162gt1-d.pdf
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2SA1162GT1, 2SA1162YT1General PurposeAmplifier TransistorsPNP Surface Mount Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: TBDCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 50 VdcCollector-Emitter Voltage V(BR)CEO 50 VdcEmitter-Base Voltage V(BR)EBO 7.0 Vdc2 1BASE EMITTERCollector Current - Continuo
2sa1124 e.pdf
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Transistor2SA1124Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC26325.9 0.2 4.9 0.2FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.High collector to emitter voltage VCEO.0.7 0.1Small collector output capacitance Cob.Makes up a complementary pair with 2SC
2sa1128.pdf
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Transistor2SA1128Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converter circuits.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 25 V0.45 0.1 0.45 0.1
2sa1128 e.pdf
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Transistor2SA1128Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converter circuits.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 25 V0.45 0.1 0.45 0.1
2sa1123.pdf
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Transistor2SA1123Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC26315.0 0.2 4.0 0.2FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Makes up a complementary pair with 2SC2631, which
2sa1127 e.pdf
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Transistor2SA1127Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC26345.0 0.2 4.0 0.2FeaturesLow noise characteristics.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V0.45 0.1 0.45 0.1Collector to e
2sa1123 e.pdf
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Transistor2SA1123Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC26315.0 0.2 4.0 0.2FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Makes up a complementary pair with 2SC2631, which
2sa1124.pdf
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Transistor2SA1124Silicon PNP epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SC26325.9 0.2 4.9 0.2FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristics.High collector to emitter voltage VCEO.0.7 0.1Small collector output capacitance Cob.Makes up a complementary pair with 2SC
2sa1127.pdf
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Transistor2SA1127Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC26345.0 0.2 4.0 0.2FeaturesLow noise characteristics.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V0.45 0.1 0.45 0.1Collector to e
2sa1188 2sa1189.pdf
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2SA1188, 2SA1189Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2853 and 2SC2854OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1188, 2SA1189Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1188 2SA1189 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to b
2sa1193.pdf
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2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak
2sa1190 2sa1191.pdf
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2SA1190, 2SA1191Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC2855 and 2SC2856OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1190, 2SA1191Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1190 2SA1191 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEm
2sa1171.pdf
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2SA1171Silicon PNP EpitaxialApplicationLow frequency small signal amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1171Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 90 VCollector to emitter voltage VCEO 90 VEmitter to base voltage VEBO 5 VCollector current IC 50 mACollector power dissipation P
2sa1122.pdf
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2SA1122Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1122Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 55 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mWJu
2sa1121.pdf
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2SA1121Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2618OutlineMPAK311. Emitter2. Base23. Collector2SA1121Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4 VCollector current IC 500 mA
2sa1193k.pdf
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2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak
2sa1194.pdf
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2SA1194(K)Silicon PNP EpitaxialApplicationHigh gain amplifierOutlineTO-126 MOD231. Emitter2. Collector3. Base1231Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 1 ACollector peak current IC(peak) 2 AC
2sa1162.pdf
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2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low Noise: NF=1 dB(Typ.), 10 dB(Max.) A Complements of the 2SC2712 L33MECHANICAL DATA Top ViewC B Case: SOT-23, Molded Plastic 11 2 Weight: 0.008 grams(approx.) 2K
2sa1179.pdf
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2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage AL33Top View C B11 2MARKING 2K EProduct Marking Code D2SA1179 MH JF GMillimeter MillimeterPACKAGE INFORMATION REF. REF.Min. Max. Min. Ma
2sa1104.pdf
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Silicon Epitaxial Planar Transistor2SA1104GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purposeMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 120 VCollector-emitter voltage (open base)VCEO - 120 VCollector curren
2sa1103.pdf
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2SA1103 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2578 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -7
2sa1102.pdf
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2SA1102 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle
2sa1105.pdf
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2SA1105 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -9
2sa1106.pdf
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2SA1106 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2581ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll
2sa1162.pdf
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1 162 TRANSISTOR (PNP) 3FEATURES 1 . Low noise 2 . Complementary to 2SC2712 1. BASE . Small Package 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll
2sa1179.pdf
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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1179 TRANSISTOR (PNP)3FEATURES 1 . High breakdown voltage 1. BASE 22. EMITTER MARKING: M 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base
2sa1110.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification PI
2sa1180.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V
2sa1109.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1109 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ra
2sa1141.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
2sa1104.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1104 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS For use in audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)
2sa1135.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALU
2sa1108.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1108 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT
2sa1107.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1107 DESCRIPTION With MT-200 package High power dissipations APPLICATIONS Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER
2sa1146.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION With TO-3P(I) package High power dissipations APPLICATIONS For audio and general purpose amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBO
2sa1116.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION
2sa1103.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1103 DESCRIPTION With TO-3PN package Complement to type 2SC2578 High current capability High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
2sa1129.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1129 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity Complement to type 2SC2654 APPLICATIONS For low-frequency power amplifiers and mid-speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
2sa1185.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION With TO-3PN package High current capability Low collector saturation voltage APPLICATIONS High power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)
2sa1133 2sa1133a.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
2sa1170.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1170 DESCRIPTION With MT-200 package High power dissipation Complement to type 2SC2774 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratin
2sa1166.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1166 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER
2sa1195.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION With TO-202 package High power dissipation Complement to type 2SC2483 APPLICATIONS For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYM
2sa1102.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1102 DESCRIPTION With TO-3PN package Complement to type 2SC2577 High current capability High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
2sa1120.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1120 DESCRIPTION With TO-126 package High transition frequency Low collector saturation voltage APPLICATIONS Audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNI
2sa1125.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1125 DESCRIPTION With TO-220 package Complement to type 2SC2633 High breakdown voltage APPLICATIONS For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximu
2sa1187.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1187 DESCRIPTION With MT-200 package High current capability APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS
2sa1184.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
2sa1186.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)
2sa1117.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1117 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS V
2sa1169.pdf
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JMnic Product SpecificationSilicon PNP Power Transistors 2SA1169 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER
2sa1105.pdf
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JMnic Product SpecificationSilicon PNP Power Transistors 2SA1105 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
2sa1106.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1106 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
2sa1142.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION With TO-126 package Complement to type 2SC2682 APPLICATIONS Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-126) and symbol3 BaseAbsolute maximum ratin
2sa1147.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1147 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SC2707 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=)
2sa1112.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
2sa1186.pdf
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LAPT 2SA1186Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)SymbolSymbol Ratings Unit Conditions Ratings Unit0.24.80.415.60.1ICBO VCB=150V 100max A 9.6 2.0VCBO 150 VIEBO VEB=5V 100m
2sa1162.pdf
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2SA1 1 62 TRANSISTOR(PNP)SOT-23 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. 1. BASE . Small Package. 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC
2sa1179.pdf
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2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 20
2sa1162.pdf
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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM1162MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -50 Vdc-
2sa1179 sot-23.pdf
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2SA1179 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -
2sa1145.pdf
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2SA1145 TO-92MOD Transistor (PNP)1. EMITTER TO-92MOD1 2. COLLECTOR 2 3 3. BASE Features5.8006.200 Complementary to 2SC2705 Small collector output capacitance: Cob=2.5pF(Typ.) 8.4008.800 High transition frequency: fT=200MHz(Typ.) 0.9001.1000.400MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.60013.800Symbol Parameter Value Units14.200VCBO
2sa1162 sot-23.pdf
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2SA1162 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Low noise: NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage
2sa1162 sot-23-3l.pdf
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2SA162 SOT-23-3L Transistor(PNP)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 0.151.90MARKING: SO , SY , SG Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base V
2sa1162.pdf
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2SA1162 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,,,, 2SC2712 High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712. /
2sa1162.pdf
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SMD Type TransistorsPNP Transistors2SA1162SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High voltage and high current High hFE: hFE = 70~400 1 2+0.1+0.050.95 -0.1 0.1 -0.01 Low noise: NF = 1dB (typ.), 10dB (max)1.9+0.1-0.1 Complementary to 2SC27121.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol
2sa1163.pdf
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SMD Type TransistorsPNP Transistors2SA1163SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High voltage: VCEO = -120 V High hFE: hFE = 200~700 Low noise: NF = 1dB (typ.), 10dB (max)1 2+0.1+0.050.95 -0.1 0.1 -0.01 Small package+0.11.9 -0.1 Complementary to 2SC27131.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25
2sa1182.pdf
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SMD Type TransistorsPNP Transistors2SA1182SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-0.5A1 2 Collector Emitter Voltage VCEO=-32V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC2859.1.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collect
2sa1171.pdf
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SMD Type orSMD Type TransistICsPNP Transistors2SA1171SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Low frequency small signal amplifier+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -90 VCollector to emitter voltage VCEO -90 VEmitter
2sa1173.pdf
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SMD Type TransistorsPNP Transistors2SA1173SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-140V Complementary to 2SC27800.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage V
2sa1162-hf.pdf
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SMD Type TransistorsPNP Transistors2SA1162-HFSOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features High voltage and high current1 2 High hFE: hFE = 70~400+0.02+0.10.15 -0.020.95 -0.1 Low noise: NF = 1dB (typ.), 10dB (max) +0.11.9-0.2 Complementary to 2SC2712-HF Pb-Free Package May be Available. The G-Suffix Denotes a1. Base Pb-Fre
2sa1179.pdf
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SMD Type orSMD Type TransistICsPNP Transistors2SA1179SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh breakdown voltage1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -55 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO
2sa1122.pdf
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SMD Type orSMD Type TransistICsPNP Transistors2SA1122SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1Features3Low frequency amplifier1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -55 VCollector to emitter voltage VCEO -55 VEmitter to base vol
2sa1121.pdf
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SMD Type orSMD Type TransistICsPNP Transistors2SA1121SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13Features Low frequency amplifier Complementary pair with 2SC26181 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -35 VCollector to emitter
2sa1129 3ca1129.pdf
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2SA1129(3CA1129) PNP /SILICON PNP TRANSISTOR : Purpose: For low-frequency power amplifiers and mid-speed switching. , 2SC2654(3DA2654) Features: Large current capacity with small package, low collector saturation voltage, pair with 2SC2654(3DA2654). /Absolute
2sa1162o 2sa1162y 2sa1162g.pdf
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2SA1162Silicon Epitaxial Planar Transistor FEATURES Low noise: NF=1dB(Typ),10dB(Max). Complementary to 2SC2712. Small package. APPLICATIONS General purpose application. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified REV.08 1 of 42SA1162ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified REV.08 2 of 42SA1162TYPIC
2sa1162.pdf
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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD2SA1162MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -50 Vdc-Collector-Base VoltageVCBO -50 Vdc-Emitter-Base VoltageVEBO -5.0 Vdc-C
2sa1186o 2sa1186p 2sa1186y.pdf
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SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2837APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emit
2sa1141r 2sa1141q.pdf
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SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681APPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -115 VCBO
2sa1106.pdf
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SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1106DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SC2581APPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
2sa1110.pdf
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isc Silicon PNP Power Transistor 2SA1110DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2590Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VAL
2sa1133.pdf
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isc Silicon PNP Power Transistor 2SA1133DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(Ta
2sa1180.pdf
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isc Silicon PNP Power Transistor 2SA1180DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sa1109.pdf
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isc Silicon PNP Power Transistor 2SA1109DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min.)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2sa1141.pdf
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isc Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2sa1104.pdf
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isc Silicon PNP Power Transistor 2SA1104DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
2sa1135.pdf
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isc Silicon PNP Power Transistor 2SA1135DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2665Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
2sa1108.pdf
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isc Silicon PNP Power Transistor 2SA1108DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -130V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sa1111 2sa1112.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFEHigh VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-
2sa1107.pdf
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isc Silicon PNP Power Transistor 2SA1107DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sa1146.pdf
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isc Silicon PNP Power Transistor 2SA1146DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =- 140V(Min)(BR)CEOComplement to Type 2SC2706Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency low power amplifier applicationsRecommend for 70W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM R
2sa1116.pdf
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isc Silicon PNP Power Transistor 2SA1116DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2607Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sa1103.pdf
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isc Silicon PNP Power Transistor 2SA1103DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -100V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100
2sa1129.pdf
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isc Silicon PNP Power Transistor 2SA1129DESCRIPTIONLow Collector Saturation Voltage:V = -0.3(V)(Max)@I = -3ACE(sat) CLarge Current Capability-I = -7ACComplement to Type 2SC2654Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ideal foruse as a ramp driver.ABSOLUTE MAXIM
2sa1185.pdf
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isc Silicon PNP Power Transistor 2SA1185DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min.)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -0.8V(Max.)@ I = -7ACE(sat) CGood Linearity of hFELarge Collector CurrentMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio freq
2sa1133 2sa1133a.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base
2sa1170.pdf
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isc Silicon PNP Power Transistor 2SA1170DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2774APPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collector-Emitter Voltage -200 V
2sa1166.pdf
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isc Silicon PNP Power Transistor 2SA1166DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 100W high-fidelity audio frequencyamplifier output stageABSOLUTE MAXI
2sa1195.pdf
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isc Silicon PNP Power Transistor 2SA1195DESCRIPTIONLow Collector Saturation VoltageHigh voltageComplement to Type 2SC2483Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Co
2sa1102.pdf
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isc Silicon PNP Power Transistor 2SA1102DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 V
2sa1120.pdf
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isc Silicon PNP Power Transistor 2SA1120DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -20V (Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = 0.1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobo flash applicationsAudio power amplifer applicationsABSOLUTE MAXIMUM RATINGS(Ta=25
2sa1125.pdf
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isc Silicon PNP Power Transistor 2SA1125DESCRIPTIONLow Collector Saturation VoltageLarge Current CapabilityComplement to Type 2SC2633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency high voltageamplifier applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector
2sa1187.pdf
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isc Silicon PNP Power Transistor 2SA1187DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2838Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sa1184.pdf
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isc Silicon PNP Power Transistor 2SA1184DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -120V (Min)(BR)CEOComplement to Type 2SC2824Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-B
2sa1145.pdf
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isc Silicon PNP Power Transistor 2SA1145DESCRIPTIONLow collector output capacitanceHigh frequencyComplement to 2SC2705Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency amplifier applicationABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emitte
2sa1186.pdf
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sa1117.pdf
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isc Silicon PNP Power Transistor 2SA1117DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2608Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C
2sa1169.pdf
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isc Silicon PNP Power Transistor 2SA1169DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2773Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sa1111.pdf
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isc Silicon PNP Power Transistor 2SA1111DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2591Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
2sa1105.pdf
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isc Silicon PNP Power Transistor 2SA1105DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
2sa1106.pdf
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1106DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEHigh Power DissipationComplement to Type 2SC2581Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXI
2sa1133a.pdf
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isc Silicon PNP Power Transistor 2SA1133ADESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SC2660AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and TV vertical deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(
2sa1142.pdf
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isc Silicon PNP Power Transistor 2SA1142DESCRIPTIONLow Collector Saturation VoltageHigh voltage,fTComplement to Type 2SC2682Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBO
2sa1147.pdf
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isc Silicon PNP Power Transistor 2SA1147DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -180V(Min.)(BR)CEOHigh Power DissipationComplement to Type 2SC2707Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching amplifier and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
2sa1112.pdf
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isc Silicon PNP Power Transistor 2SA1112DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2592Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency drivers and high poweramplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
Otros transistores... 2SA1146 , 2SA1147 , 2SA115 , 2SA1150 , 2SA1150O , 2SA1150Y , 2SA1151 , 2SA1152 , A1266 , 2SA1154 , 2SA1155 , 2SA1156 , 2SA1158 , 2SA116 , 2SA1160 , 2SA1160A , 2SA1160B .