2SA1156 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1156
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 400 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 90
Encapsulados: TO126
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2SA1156 datasheet
2sa1150.pdf
2SA1150 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 Low Frequency Amplifier Applications Unit mm High hFE h = 100 320 FE Complementary to 2SC2710. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Collector current I
2sa1162-o 2sa1162-y 2sa1162-gr.pdf
2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 to 400 Low noise NF = 1dB (typ.), 10dB (max) Complementar
2sa1162.pdf
2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Low noise NF = 1dB (typ.), 10dB (max) Complementary t
2sa1163.pdf
2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC2713 Small package Abs
2sa1163gr 2sa1163bl.pdf
2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit mm AEC-Q101 Qualified (Note1). High voltage V = -120 V CEO Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High h h = 200 to 700 FE FE Low noise NF = 1 dB (typ.), 10 dB (max)
2sa1182.pdf
2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC2859. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Col
2sa1145.pdf
2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC2705. Small Collector Output Capacitance Cob = 2.5 pF (typ.) High Transition Frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Coll
2sa1179n 2sc2812n.pdf
Ordering number EN7198A 2SA1179N / 2SC2812N SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose 2SA1179N / 2SC2812N Amp Applications Features Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) 2SA1179N Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
2sa1179 2sa1179n.pdf
No. N7198 2SA1179N / 2SC2812N No. N7198 72602 PNP / NPN 2SA1179N / 2SC2812N 2SA1179N Absolu
2sa1177.pdf
Ordering number ENN851H PNP Epitaxial Planar Silicon Transistor 2SA1177 HF Amp Applications Use Package Dimensions Ideally suited for use in FM RF amplifiers, mixers, unit mm oscillators, converters, IF amplifiers. 2033A [2SA1177] 2.2 4.0 Features High fT (230MHz typ.) and small Cre (1.1 pF typ.). Small NF (2.5dB typ.). 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter
r07ds0271ej 2sa1121-1.pdf
Preliminary Datasheet R07DS0271EJ0300 2SA1121 (Previous REJ03G0636-0200) Rev.3.00 Silicon PNP Epitaxial Mar 28, 2011 Application Low frequency amplifier Complementary pair with 2SC2618 Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collec
2sa1129.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1129 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SA1129 is a mold power transistor developed for mid-speed ORDERING INFORMATION switching, and is ideal for use as a ramp driver. Part No. Package 2SA1129 TO-220AB FEATURES Large current capacity with small package IC(DC) = -7.0 A (TO-220AB)
2sa1199.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1162-gr.pdf
MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang
2sa1162-o.pdf
MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang
2sa1162-y.pdf
MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang
2sa1162gt1-d.pdf
2SA1162GT1, 2SA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount Moisture Sensitivity Level 1 http //onsemi.com ESD Rating TBD COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc 2 1 BASE EMITTER Collector Current - Continuo
2sa1124 e.pdf
Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2632 5.9 0.2 4.9 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. 0.7 0.1 Small collector output capacitance Cob. Makes up a complementary pair with 2SC
2sa1128.pdf
Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 25 V 0.45 0.1 0.45 0.1
2sa1128 e.pdf
Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 25 V 0.45 0.1 0.45 0.1
2sa1123.pdf
Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2631 5.0 0.2 4.0 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which
2sa1127 e.pdf
Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC2634 5.0 0.2 4.0 0.2 Features Low noise characteristics. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 Collector to e
2sa1123 e.pdf
Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2631 5.0 0.2 4.0 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which
2sa1124.pdf
Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SC2632 5.9 0.2 4.9 0.2 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. 0.7 0.1 Small collector output capacitance Cob. Makes up a complementary pair with 2SC
2sa1127.pdf
Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC2634 5.0 0.2 4.0 0.2 Features Low noise characteristics. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 Collector to e
2sa1188 2sa1189.pdf
2SA1188, 2SA1189 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1188 2SA1189 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to b
2sa1193.pdf
2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 0.5 A Collector peak
2sa1190 2sa1191.pdf
2SA1190, 2SA1191 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC2855 and 2SC2856 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1190, 2SA1191 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1190 2SA1191 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Em
2sa1171.pdf
2SA1171 Silicon PNP Epitaxial Application Low frequency small signal amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1171 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 90 V Collector to emitter voltage VCEO 90 V Emitter to base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation P
2sa1122.pdf
2SA1122 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1122 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 55 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Ju
2sa1121.pdf
2SA1121 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2618 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1121 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 500 mA
2sa1193k.pdf
2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 0.5 A Collector peak
2sa1194.pdf
2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 1 A Collector peak current IC(peak) 2 A C
2sa1162.pdf
2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low Noise NF=1 dB(Typ.), 10 dB(Max.) A Complements of the 2SC2712 L 3 3 MECHANICAL DATA Top View C B Case SOT-23, Molded Plastic 1 1 2 Weight 0.008 grams(approx.) 2 K
2sa1179.pdf
2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage A L 3 3 Top View C B 1 1 2 MARKING 2 K E Product Marking Code D 2SA1179 M H J F G Millimeter Millimeter PACKAGE INFORMATION REF. REF. Min. Max. Min. Ma
2sa1104.pdf
Silicon Epitaxial Planar Transistor 2SA1104 GENERAL DESCRIPTION Silicon PNP high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 120 V Collector-emitter voltage (open base) VCEO - 120 V Collector curren
2sa1103.pdf
2SA1103 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2578 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -7
2sa1102.pdf
2SA1102 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle
2sa1105.pdf
2SA1105 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2577 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -9
2sa1106.pdf
2SA1106 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC2581 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll
2sa1162.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1 162 TRANSISTOR (PNP) 3 FEATURES 1 . Low noise 2 . Complementary to 2SC2712 1. BASE . Small Package 2. EMITTER 3. COLLECTOR MARKING SO , SY , SG MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll
2sa1179.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1179 TRANSISTOR (PNP) 3 FEATURES 1 . High breakdown voltage 1. BASE 2 2. EMITTER MARKING M 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base
2sa1110.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1110 DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification PI
2sa1180.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS V
2sa1109.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1109 DESCRIPTION With TO-3 package Low collector saturation voltage High transition frequency APPLICATIONS For audio frequency amplifier and high power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ra
2sa1141.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC
2sa1104.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1104 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS For use in audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )
2sa1135.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION With TO-3PN package Complement to type 2SC2665 APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALU
2sa1108.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1108 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT
2sa1107.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1107 DESCRIPTION With MT-200 package High power dissipations APPLICATIONS Audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER
2sa1146.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION With TO-3P(I) package High power dissipations APPLICATIONS For audio and general purpose amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBO
2sa1116.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1116 DESCRIPTION With TO-3 package Complement to type 2SC2607 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITION
2sa1103.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1103 DESCRIPTION With TO-3PN package Complement to type 2SC2578 High current capability High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
2sa1129.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1129 DESCRIPTION With TO-220 package Low collector saturation voltage Large current capacity Complement to type 2SC2654 APPLICATIONS For low-frequency power amplifiers and mid-speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
2sa1185.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION With TO-3PN package High current capability Low collector saturation voltage APPLICATIONS High power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )
2sa1133 2sa1133a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified
2sa1170.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1170 DESCRIPTION With MT-200 package High power dissipation Complement to type 2SC2774 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratin
2sa1166.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1166 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER
2sa1195.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION With TO-202 package High power dissipation Complement to type 2SC2483 APPLICATIONS For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYM
2sa1102.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1102 DESCRIPTION With TO-3PN package Complement to type 2SC2577 High current capability High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
2sa1120.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1120 DESCRIPTION With TO-126 package High transition frequency Low collector saturation voltage APPLICATIONS Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNI
2sa1125.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1125 DESCRIPTION With TO-220 package Complement to type 2SC2633 High breakdown voltage APPLICATIONS For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximu
2sa1187.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1187 DESCRIPTION With MT-200 package High current capability APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS
2sa1184.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
2sa1186.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )
2sa1117.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1117 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS V
2sa1169.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1169 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER
2sa1105.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1105 DESCRIPTION With TO-3PN package High frequency High power dissipation APPLICATIONS Audio power amplifer applications DC-DC converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=
2sa1142.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1142 DESCRIPTION With TO-126 package Complement to type 2SC2682 APPLICATIONS Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-126) and symbol 3 Base Absolute maximum ratin
2sa1147.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1147 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SC2707 APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= )
2sa1112.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol
2sa1186.pdf
LAPT 2SA1186 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Symbol Ratings Unit Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 ICBO VCB= 150V 100max A 9.6 2.0 VCBO 150 V IEBO VEB= 5V 100m
2sa1162.pdf
2SA1 1 62 TRANSISTOR(PNP) SOT-23 FEATURES . Low noise NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. 1. BASE . Small Package. 2. EMITTER 3. COLLECTOR MARKING SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC
2sa1179.pdf
2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 20
2sa1162.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1162 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc -
2sa1179 sot-23.pdf
2SA1179 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -55 V VCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -
2sa1145.pdf
2SA1145 TO-92MOD Transistor (PNP) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 Complementary to 2SC2705 Small collector output capacitance Cob=2.5pF(Typ.) 8.400 8.800 High transition frequency fT=200MHz(Typ.) 0.900 1.100 0.400 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 13.800 Symbol Parameter Value Units 14.200 VCBO
2sa1162 sot-23.pdf
2SA1162 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low noise NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage
2sa1162 sot-23-3l.pdf
2SA162 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low noise NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 0.15 1.90 MARKING SO , SY , SG Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V
2sa1162.pdf
2SA1162 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , , , 2SC2712 High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712. /
2sa1162.pdf
SMD Type Transistors PNP Transistors 2SA1162 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current High hFE hFE = 70 400 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low noise NF = 1dB (typ.), 10dB (max) 1.9+0.1 -0.1 Complementary to 2SC2712 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol
2sa1163.pdf
SMD Type Transistors PNP Transistors 2SA1163 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High voltage VCEO = -120 V High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Small package +0.1 1.9 -0.1 Complementary to 2SC2713 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25
2sa1182.pdf
SMD Type Transistors PNP Transistors 2SA1182 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-0.5A 1 2 Collector Emitter Voltage VCEO=-32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC2859. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect
2sa1171.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1171 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Low frequency small signal amplifier +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -90 V Collector to emitter voltage VCEO -90 V Emitter
2sa1173.pdf
SMD Type Transistors PNP Transistors 2SA1173 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-140V Complementary to 2SC2780 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage V
2sa1162-hf.pdf
SMD Type Transistors PNP Transistors 2SA1162-HF SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current 1 2 High hFE hFE = 70 400 +0.02 +0.1 0.15 -0.02 0.95 -0.1 Low noise NF = 1dB (typ.), 10dB (max) +0.1 1.9-0.2 Complementary to 2SC2712-HF Pb-Free Package May be Available. The G-Suffix Denotes a 1. Base Pb-Fre
2sa1179.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1179 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High breakdown voltage 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -55 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO
2sa1122.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1122 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 Low frequency amplifier 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -55 V Collector to emitter voltage VCEO -55 V Emitter to base vol
2sa1121.pdf
SMD Type or SMD Type TransistICs PNP Transistors 2SA1121 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Low frequency amplifier Complementary pair with 2SC2618 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -35 V Collector to emitter
2sa1129 3ca1129.pdf
2SA1129(3CA1129) PNP /SILICON PNP TRANSISTOR Purpose For low-frequency power amplifiers and mid-speed switching. , 2SC2654(3DA2654) Features Large current capacity with small package, low collector saturation voltage, pair with 2SC2654(3DA2654). /Absolute
2sa1162o 2sa1162y 2sa1162g.pdf
2SA1162 Silicon Epitaxial Planar Transistor FEATURES Low noise NF=1dB(Typ),10dB(Max). Complementary to 2SC2712. Small package. APPLICATIONS General purpose application. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified REV.08 1 of 4 2SA1162 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified REV.08 2 of 4 2SA1162 TYPIC
2sa1162.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SA1162 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -50 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - C
2sa1186o 2sa1186p 2sa1186y.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2837 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CBO V Collector-Emit
2sa1141r 2sa1141q.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1141 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -115V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2681 APPLICATIONS Audio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -115 V CBO
2sa1106.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SC2581 APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
2sa1110.pdf
isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2590 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VAL
2sa1133.pdf
isc Silicon PNP Power Transistor 2SA1133 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SC2660 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta
2sa1180.pdf
isc Silicon PNP Power Transistor 2SA1180 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sa1109.pdf
isc Silicon PNP Power Transistor 2SA1109 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
2sa1141.pdf
isc Silicon PNP Power Transistor 2SA1141 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -115V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2681 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sa1104.pdf
isc Silicon PNP Power Transistor 2SA1104 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
2sa1135.pdf
isc Silicon PNP Power Transistor 2SA1135 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2665 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll
2sa1108.pdf
isc Silicon PNP Power Transistor 2SA1108 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sa1111 2sa1112.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1111 2SA1112 DESCRIPTION With TO-220 package Complement to type 2SC2591/2592 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-
2sa1107.pdf
isc Silicon PNP Power Transistor 2SA1107 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sa1146.pdf
isc Silicon PNP Power Transistor 2SA1146 DESCRIPTION Collector-Emitter Breakdown Voltage- V =- 140V(Min) (BR)CEO Complement to Type 2SC2706 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency low power amplifier applications Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM R
2sa1116.pdf
isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min.) (BR)CEO High Power Dissipation Complement to Type 2SC2607 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
2sa1103.pdf
isc Silicon PNP Power Transistor 2SA1103 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100
2sa1129.pdf
isc Silicon PNP Power Transistor 2SA1129 DESCRIPTION Low Collector Saturation Voltage V = -0.3(V)(Max)@I = -3A CE(sat) C Large Current Capability-I = -7A C Complement to Type 2SC2654 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ideal for use as a ramp driver. ABSOLUTE MAXIM
2sa1185.pdf
isc Silicon PNP Power Transistor 2SA1185 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min.) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -0.8V(Max.)@ I = -7A CE(sat) C Good Linearity of h FE Large Collector Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio freq
2sa1133 2sa1133a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION With TO-220 package High breakdown voltage High power dissipation Complement to type 2SC2660/2660A APPLICATIONS For power amplifier and TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base
2sa1170.pdf
isc Silicon PNP Power Transistor 2SA1170 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2774 APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -200 V
2sa1166.pdf
isc Silicon PNP Power Transistor 2SA1166 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXI
2sa1195.pdf
isc Silicon PNP Power Transistor 2SA1195 DESCRIPTION Low Collector Saturation Voltage High voltage Complement to Type 2SC2483 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Co
2sa1102.pdf
isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -80 V
2sa1125.pdf
isc Silicon PNP Power Transistor 2SA1125 DESCRIPTION Low Collector Saturation Voltage Large Current Capability Complement to Type 2SC2633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency high voltage amplifier application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sa1187.pdf
isc Silicon PNP Power Transistor 2SA1187 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2838 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sa1184.pdf
isc Silicon PNP Power Transistor 2SA1184 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Complement to Type 2SC2824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-B
2sa1145.pdf
isc Silicon PNP Power Transistor 2SA1145 DESCRIPTION Low collector output capacitance High frequency Complement to 2SC2705 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CBO V Collector-Emitte
2sa1186.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sa1117.pdf
isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min.) (BR)CEO High Power Dissipation Complement to Type 2SC2608 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C
2sa1169.pdf
isc Silicon PNP Power Transistor 2SA1169 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2773 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
2sa1111.pdf
isc Silicon PNP Power Transistor 2SA1111 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2591 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY
2sa1105.pdf
isc Silicon PNP Power Transistor 2SA1105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
2sa1106.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SC2581 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXI
2sa1133a.pdf
isc Silicon PNP Power Transistor 2SA1133A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V (Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SC2660A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(
2sa1142.pdf
isc Silicon PNP Power Transistor 2SA1142 DESCRIPTION Low Collector Saturation Voltage High voltage,f T Complement to Type 2SC2682 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO
2sa1147.pdf
isc Silicon PNP Power Transistor 2SA1147 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min.) (BR)CEO High Power Dissipation Complement to Type 2SC2707 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sa1112.pdf
isc Silicon PNP Power Transistor 2SA1112 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2592 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY
Otros transistores... 2SA1150 , 2SA1150O , 2SA1150Y , 2SA1151 , 2SA1152 , 2SA1153 , 2SA1154 , 2SA1155 , 2SD669A , 2SA1158 , 2SA116 , 2SA1160 , 2SA1160A , 2SA1160B , 2SA1160C , 2SA1161 , 2SA1162 .
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