2SA1160B. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SA1160B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1160B

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: TO92

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2SA1160B datasheet

7.1. Size:178K toshiba
2sa1160.pdf pdf_icon

8.1. Size:216K toshiba
2sa1162-o 2sa1162-y 2sa1162-gr.pdf pdf_icon

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 to 400 Low noise NF = 1dB (typ.), 10dB (max) Complementar

8.2. Size:172K toshiba
2sa1162.pdf pdf_icon

2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage and high current VCEO = -50 V, IC = -150 mA (max) Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 70 400 Low noise NF = 1dB (typ.), 10dB (max) Complementary t

8.3. Size:265K toshiba
2sa1163.pdf pdf_icon

2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit mm High voltage VCEO = -120 V Excellent hFE linearity hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SC2713 Small package Abs

8.4. Size:503K toshiba
2sa1163gr 2sa1163bl.pdf pdf_icon

2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications Unit mm AEC-Q101 Qualified (Note1). High voltage V = -120 V CEO Excellent h linearity h (I = -0.1 mA)/h (I = -2 mA) FE FE C FE C = 0.95 (typ.) High h h = 200 to 700 FE FE Low noise NF = 1 dB (typ.), 10 dB (max)

8.5. Size:192K mcc
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MCC 2SA1162-O TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1162-Y Micro Commercial Components CA 91311 Phone (818) 701-4933 2SA1162-GR Fax (818) 701-4939 Features Capable of 0.15Watts of Power Dissipation. PNP Silicon Collector-current 0.15A Collector-base Voltage -50V Plastic-Encapsulate Operating and storage junction temperature rang

8.6. Size:192K mcc
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8.7. Size:192K mcc
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8.8. Size:45K onsemi
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2SA1162GT1, 2SA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount Moisture Sensitivity Level 1 http //onsemi.com ESD Rating TBD COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc 2 1 BASE EMITTER Collector Current - Continuo

8.9. Size:326K secos
2sa1162.pdf pdf_icon

2SA1162 -0.15A, -50V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low Noise NF=1 dB(Typ.), 10 dB(Max.) A Complements of the 2SC2712 L 3 3 MECHANICAL DATA Top View C B Case SOT-23, Molded Plastic 1 1 2 Weight 0.008 grams(approx.) 2 K

8.10. Size:1098K jiangsu
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1 162 TRANSISTOR (PNP) 3 FEATURES 1 . Low noise 2 . Complementary to 2SC2712 1. BASE . Small Package 2. EMITTER 3. COLLECTOR MARKING SO , SY , SG MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll

8.11. Size:160K jmnic
2sa1166.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1166 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

8.12. Size:159K jmnic
2sa1169.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1169 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

8.13. Size:584K htsemi
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2SA1 1 62 TRANSISTOR(PNP) SOT-23 FEATURES . Low noise NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. 1. BASE . Small Package. 2. EMITTER 3. COLLECTOR MARKING SO , SY , SG MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC

8.14. Size:274K gsme
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Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1162 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc -

8.15. Size:217K lge
2sa1162 sot-23.pdf pdf_icon

2SA1162 SOT-23 Transistor(PNP) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Low noise NF=1dB(Typ.)10dB(Max.) Complementary to 2SC2712 Small package MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage

8.16. Size:225K lge
2sa1162 sot-23-3l.pdf pdf_icon

2SA162 SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low noise NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 0.15 1.90 MARKING SO , SY , SG Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V

8.17. Size:693K blue-rocket-elect
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2SA1162 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , , , 2SC2712 High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712. /

8.18. Size:1198K kexin
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SMD Type Transistors PNP Transistors 2SA1162 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current High hFE hFE = 70 400 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low noise NF = 1dB (typ.), 10dB (max) 1.9+0.1 -0.1 Complementary to 2SC2712 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol

8.19. Size:1685K kexin
2sa1163.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1163 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 Features 3 High voltage VCEO = -120 V High hFE hFE = 200 700 Low noise NF = 1dB (typ.), 10dB (max) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Small package +0.1 1.9 -0.1 Complementary to 2SC2713 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

8.20. Size:1032K kexin
2sa1162-hf.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SA1162-HF SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features High voltage and high current 1 2 High hFE hFE = 70 400 +0.02 +0.1 0.15 -0.02 0.95 -0.1 Low noise NF = 1dB (typ.), 10dB (max) +0.1 1.9-0.2 Complementary to 2SC2712-HF Pb-Free Package May be Available. The G-Suffix Denotes a 1. Base Pb-Fre

8.21. Size:759K cn shikues
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2SA1162 Silicon Epitaxial Planar Transistor FEATURES Low noise NF=1dB(Typ),10dB(Max). Complementary to 2SC2712. Small package. APPLICATIONS General purpose application. ORDERING INFORMATION MAXIMUM RATING @ Ta=25 unless otherwise specified REV.08 1 of 4 2SA1162 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified REV.08 2 of 4 2SA1162 TYPIC

8.22. Size:302K cn fosan
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ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SA1162 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -50 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - C

8.23. Size:217K inchange semiconductor
2sa1166.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1166 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommended for 100W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXI

8.24. Size:219K inchange semiconductor
2sa1169.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1169 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2773 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

Otros transistores... 2SA1153 , 2SA1154 , 2SA1155 , 2SA1156 , 2SA1158 , 2SA116 , 2SA1160 , 2SA1160A , BC556 , 2SA1160C , 2SA1161 , 2SA1162 , 2SA1163 , 2SA1164 , 2SA1166 , 2SA1166A , 2SA1169 .