C2073B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TRANSISTOR C2073B MAIN CHARACTERISTICS FEATURES IC 1.5A Epitaxial silicon VCEO 150V High switching speed PC 25W RoHS RoHS product A940 Complementary to A940 APPLICATIONS High frequency switch power supply Commonly power amplifier

KSC2073TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : VCBO = 150VTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Curre

KSC2073 NPN EPITAXIAL SILICON TRANSISTORTV VERTICAL DEFLECTION OUTPUTTO-220 Complement to KSA940 Collector-Base Voltage VCBO = 150VABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Dissipation ( TC=25 ) PC 25 W Junction T

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

STC2073QNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-223 Ordering Information Type No. Marking Package Code STC2073Q STC2073 SOT-223 : Year & Week Code Absolute maximum

STC2073DNPN Silicon TransistorDescriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage : VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) TO-252 Ordering Information Type No. Marking Package Code STC2073D STC2073 TO-252Marking Information STC 2073 Column 1, 2

STC2073LNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) 1: Emitter 2 :Collector 3: Base Ordering Information Type No. Marking Package Code STC STC2073L 2073 TO-92L YWW STC2073: DEVICE

STC2073FNPN Silicon TransistorDescriptions PIN Connection General purpose amplifier 4 High voltage application Features High collector breakdown voltage : VCEO = 160V 1 2 3 Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Green device and RoHS compliant device Available in full lead (Pb)-free device Ordering Information

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSA940, CSC2073CSA940 PNP PLASTIC POWER TRANSISTORCSC2073 NPN PLASTIC POWER TRANSISTORPower Amplifier Applications and Vertical Output ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.6

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150

2SC2073(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Paramenter Value UnitsVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C

ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 APeak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W To

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC2073 APPLICATIONS TV Vertical Deflection Output . ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

2SC2073A(3DA2073A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940A(3CA940A) Features: Wide Safe Operating Area, complementary to 2SA940A(3CA940A). /Absolute maximum ratings(Ta=25)

2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940(3CA940) Features: Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25)

2SC2073NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications

2SC2073Silicon NPN transistor / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications

2SC2073T1TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 150

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBO

isc Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

INCHANGE Semiconductorisc Silicon NPN Power Transistor KSC2073TUDESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type KSA940TUMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATIN