C9012B Todos los transistores

 

C9012B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: C9012B
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 64
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar C9012B

 

C9012B Datasheet (PDF)

 ..1. Size:318K  feihonltd
c9012b.pdf

C9012B
C9012B

TRANSISTOR C9012B MAIN CHARACTERISTICS FEATURES IC -500mA Epitaxial silicon VCEO - 20V High switching speed PC 625mW C9013B Complementary to C9013B RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

 9.1. Size:360K  kec
ktc9012.pdf

C9012B
C9012B

SEMICONDUCTOR KTC9012TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.Complementary to KTC9013.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00MAXIMUM RATING (Ta=25)F 1.27G 0.85CHARACTERISTIC SYMBOL RATING UNITH 0.45_HJ 14.00 + 0.50VCBO -40

 9.2. Size:353K  kec
ktc9012s.pdf

C9012B
C9012B

SEMICONDUCTOR KTC9012STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Excellent hFE Linearity.+A 2.93 0.20B 1.30+0.20/-0.15Complementary to KTC9013S.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10QMAXIMUM RATING (Ta=25)

 9.3. Size:613K  kec
ktc9012sc.pdf

C9012B
C9012B

SEMICONDUCTOR KTC9012SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESExcellent hFE Linearity.Complementary to KTC9013SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -30 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -500 mA

 9.4. Size:96K  first silicon
ftc9012s.pdf

C9012B
C9012B

SEMICONDUCTORFTC9012STECHNICAL DATAXGeneral Purpose TransistorsPNP SiliconFEATURE3We declare that the material of product compliance with RoHS requirements.2ORDERING INFORMATION1DevicePackageShippingSOT-23FTC9012SX SOT 23 FTC9012SX10000/Tape&ReelSOT-233COLLECTOR1MAXIMUM RATINGS BASERating Symbol Value Unit2Collector-Emitter Voltage VCEO 2

 9.5. Size:302K  feihonltd
c9012a.pdf

C9012B
C9012B

TRANSISTOR C9012A MAIN CHARACTERISTICS FEATURES IC -100mA Epitaxial silicon VCEO - 20V High switching speed PC 450mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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