2SA1171 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1171Silicon PNP EpitaxialApplicationLow frequency small signal amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1171Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 90 VCollector to emitter voltage VCEO 90 VEmitter to base voltage VEBO 5 VCollector current IC 50 mACollector power dissipation P

SMD Type orSMD Type TransistICsPNP Transistors2SA1171SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Low frequency small signal amplifier+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -90 VCollector to emitter voltage VCEO -90 VEmitter

Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

No. N71982SA1179N / 2SC2812NNo. N719872602PNP / NPN 2SA1179N / 2SC2812N 2SA1179N Absolu

Ordering number:ENN851HPNP Epitaxial Planar Silicon Transistor2SA1177HF Amp ApplicationsUse Package Dimensions Ideally suited for use in FM RF amplifiers, mixers,unit:mmoscillators, converters, IF amplifiers.2033A[2SA1177]2.24.0Features High fT (230MHz typ.) and small Cre (1.1 pF typ.). Small NF (2.5dB typ.). 0.40.50.40.41 2 31.3 1.31 : Emitter

2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage AL33Top View C B11 2MARKING 2K EProduct Marking Code D2SA1179 MH JF GMillimeter MillimeterPACKAGE INFORMATION REF. REF.Min. Max. Min. Ma

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1179 TRANSISTOR (PNP)3FEATURES 1 . High breakdown voltage 1. BASE 22. EMITTER MARKING: M 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base

JMnic Product Specification Silicon PNP Power Transistors 2SA1170 DESCRIPTION With MT-200 package High power dissipation Complement to type 2SC2774 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratin

2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 20

2SA1179 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -

SMD Type TransistorsPNP Transistors2SA1173SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-140V Complementary to 2SC27800.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -140 Collector - Emitter Voltage V

SMD Type orSMD Type TransistICsPNP Transistors2SA1179SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh breakdown voltage1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -55 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO

isc Silicon PNP Power Transistor 2SA1170DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2774APPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collector-Emitter Voltage -200 V