J13007-1A-H1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: J13007-1A-H1
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 700 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar J13007-1A-H1
J13007-1A-H1 Datasheet (PDF)
j13007-1a.pdf
TRANSISTOR J13007-1A MAIN CHARACTERISTICS FEATURES IC 8A High breakdown voltage VCBO 700V High switching speed VCEO 400V High current capability PC 80W High reliability RoHS RoHS product APPLICATIONS Energy-saving light Electronic ballas
j13003.pdf
RJ13003 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. Si NPN RoHS COMPLIANT 111APPLICATION 1Fluorescent LampElectronic Ballast Charger and Switch-mode power supplies 22
alj13003.pdf
SUNROCALJ13003 TRANSISTOR(NPN)FEATURESpower switching applicationsMAXIMUM RATINGS(Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 600 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 9 VIC Collector Current-Continuous 1.2 APC Collector Power Dissipation 25 WTJ Junction Temperature 150 Tstg Storage Temperature -55
alj13001.pdf
SUNROC ALJ13001 TRANSISTOR (NPN) TO-92 FEATURES 1. BASE power switching applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation
alj13002.pdf
SUNROCALJ13002 TRANSISTOR(NPN) FEATURES 1. EMITTER Power dissipation 2.COLLECTOR PCM:0.8W(Tamb=25) Collector current 3.BASE ICM:0.6A Collector-base voltage V(BR)CBO: 600V 1 2 3 Opcrating and storage junction temperature range TJ,Tstg:-65 to -150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specjfied): MIN TYP MAX UNITParameter Symbol Tes
alj13005.pdf
SUNROCALJ13005 TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25 unless otherwise noted) MAXI Parameter Value UnitsCollector-Base Voltage VCBO 700 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 9 VCollector Current IC 2.0 ACollector Power Dissipation PC 50 WJunction Temperature Tj 150 Storag Temperature -55150 Tstg ELECTRICAL CHARACTERISTICS
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SB487
History: 2SB487
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050