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MMBT5451DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT5451DW
   Código: KNM
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT363
 

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MMBT5451DW Datasheet (PDF)

 ..1. Size:1015K  cn cbi
mmbt5451dw.pdf pdf_icon

MMBT5451DW

Plastic-Encapsulate TransistorsDUAL TRANSISTOR (NPN+PNP) FEATURES Epitaxial Planar Die Construction6 5 Ideal for low Power Amplification and Switching4 One 5551(NPN), one 5401(PNP)123MRKING:KNMMAXIMUM RATINGS NPN 5551 (Ta=25 unless otherwise noted) Symbol Para

 8.1. Size:189K  motorola
mmbt5401.pdf pdf_icon

MMBT5451DW

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT5401LT1/DHigh Voltage TransistorMMBT5401LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 150 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 160 VdcSOT23 (TO236AB)EmitterBase Volt

 8.2. Size:75K  fairchild semi
2n5401 mmbt5401.pdf pdf_icon

MMBT5451DW

2N5401 MMBT5401CEC TO-92BB SOT-23EMark: 2LPNP General Purpose AmplifierThis device is designed as a general purpose amplifier and switchfor applications requiring high voltages.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 150 VVCBO Collector-Base Voltage 160 VVEBO Emitter-Base Voltage 5.0 VI

 8.3. Size:67K  fairchild semi
mmbt5401.pdf pdf_icon

MMBT5451DW

MMBT5401PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for Capplications requiring high voltage.EBSOT-23Mark: 2LPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -150 VVCBO Collector-Base Voltage -160 VVEBO Emitter-Bas

Otros transistores... 2SD882UP , 2SD882U-E , BC846DW , BC847DW-A , BC847DW-B , BC847DW-C , BC856DW , BC857DW , MPSA42 , MMBTSA1576W-Q , MMBTSA1576W-R , MMBTSA1576W-S , MMBTSC2412 , MMBTSC2712-O , MMBTSC2712-Y , MMBTSC2712-G , MMBTSC2712-L .

History: BCX19CSM4 | DTS425 | DTA124ESA | 40406 | KSC1507Y | STC5649

 

 
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