MMBTSA1576W-Q Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBTSA1576W-Q

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 5 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT323

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MMBTSA1576W-Q datasheet

 3.1. Size:739K  cn cbi
 mmbtsa1576w.pdf pdf_icon

MMBTSA1576W-Q

PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperatur

 6.1. Size:187K  semtech
 mmbtsa1504o mmbtsa1504y mmbtsa1504g.pdf pdf_icon

MMBTSA1576W-Q

MMBTSA1504 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO

 8.1. Size:149K  semtech
 mmbtsa733r mmbtsa733o mmbtsa733y mmbtsa733p mmbtsa733l.pdf pdf_icon

MMBTSA1576W-Q

MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO

 8.2. Size:345K  semtech
 mmbtsa812o mmbtsa812y mmbtsa812g mmbtsa812l.pdf pdf_icon

MMBTSA1576W-Q

MMBTSA812 PNP Silicon Epitaxial Planar Transistor for audio frequency, general purpose amplifier. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 5

MOSTRAR MÁS

Otros transistores... 2SD882U-E, BC846DW, BC847DW-A, BC847DW-B, BC847DW-C, BC856DW, BC857DW, MMBT5451DW, B647, MMBTSA1576W-R, MMBTSA1576W-S, MMBTSC2412, MMBTSC2712-O, MMBTSC2712-Y, MMBTSC2712-G, MMBTSC2712-L, MMBTSC3356-Q