MMBTSC2712-L Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBTSC2712-L

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 350

Encapsulados: SOT23

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MMBTSC2712-L datasheet

 4.1. Size:554K  cn cbi
 mmbtsc2712.pdf pdf_icon

MMBTSC2712-L

MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features High voltage and high current VCEO=50V, IC=150mA(max) 1.Base 2.Emitter 3.Collector High hFE hFE=70 700 SOT-23 Plastic Package Low noise NF=1dB(typ.), 10dB

 7.1. Size:544K  cn cbi
 mmbtsc2412.pdf pdf_icon

MMBTSC2712-L

MMBTSC2412 TRANSISTOR (NPN) FEATURES SOT-23 Low Cob ,Cob = 2.0 pF (Typ). 1 BASE 2 EMITTER 3 COLLECTOR MARKING BR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipa

 8.1. Size:282K  semtech
 mmbtsc4098w.pdf pdf_icon

MMBTSC2712-L

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C

 8.2. Size:141K  semtech
 mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf pdf_icon

MMBTSC2712-L

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

MOSTRAR MÁS

Otros transistores... MMBT5451DW, MMBTSA1576W-Q, MMBTSA1576W-R, MMBTSA1576W-S, MMBTSC2412, MMBTSC2712-O, MMBTSC2712-Y, MMBTSC2712-G, 2SC5200, MMBTSC3356-Q, MMBTSC3356-R, MMBTSC3356-S, MMBTSC4081W-Q, MMBTSC4081W-R, MMBTSC4081W-S, MMDT3052DW-E, MMDT3052DW-F