MMBTSC3356-R . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

MMBTSC3356-R Datasheet (PDF)

4.1. Size:207K semtech
mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf pdf_icon

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base V

4.2. Size:203K cn cbi
mmbtsc3356.pdf pdf_icon

MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB

7.1. Size:508K pjsemi
mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf pdf_icon

MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

Otros transistores... MMBTSA1576W-R , MMBTSA1576W-S , MMBTSC2412 , MMBTSC2712-O , MMBTSC2712-Y , MMBTSC2712-G , MMBTSC2712-L , MMBTSC3356-Q , 2N5551 , MMBTSC3356-S , MMBTSC4081W-Q , MMBTSC4081W-R , MMBTSC4081W-S , MMDT3052DW-E , MMDT3052DW-F , MMDT3052DW-G , MMDT3904DW .