MMBTSC3356-R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTSC3356-R
Código: R24
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3000 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBTSC3356-R
MMBTSC3356-R Datasheet (PDF)
mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf
MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base V
mmbtsc3356.pdf
MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB
mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf
MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA433 | NB221EH
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050