MMBTSC3356-R Todos los transistores

 

MMBTSC3356-R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTSC3356-R
   Código: R24
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3000 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBTSC3356-R

 

MMBTSC3356-R Datasheet (PDF)

 4.1. Size:207K  semtech
mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf

MMBTSC3356-R
MMBTSC3356-R

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base V

 4.2. Size:203K  cn cbi
mmbtsc3356.pdf

MMBTSC3356-R
MMBTSC3356-R

MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB

 7.1. Size:508K  pjsemi
mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf

MMBTSC3356-R
MMBTSC3356-R

MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA433 | NB221EH

 

 
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History: 2SA433 | NB221EH

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