MMDT3904DW . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SOT -363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) MMDT3904DW SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC

MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound; Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (N

MMDT3904V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-563 Ideal for Low Power Amplification and Switching C1 B2 E2Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) BC "Green" Device (Note 4 and 5) B 1.10 1.25 1.20 C 1.55 1.70 1.60 E1

MMDT3904VC 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Case: SOT563 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Epitaxial Planar Die Construction UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Lev

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3904VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT3904VMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPNRoHS Compliant. See ordering information) Epitaxial Die Construction Plastic-Encapsulate Ideal for Low Power Amplification and Switching Tra

MMDT3904NPN Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower dissipation(0.525)REFOPCM : 0.2 W (Tamp.= 25 C).053(1.35.096(2.45).045(1.15.085(2.15)Collector currentICM : 0.2 A.018(0.46).010(0.26).0

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT3904DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Coll

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors DUAL TRANSISTOR NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60

MMDT3904SOT-363 Dual Transistor(NPN)SOT-363Features Epitaxial planar die construction Ideal for low power amplification and switching MARKING:K6N MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 V IC C

SMD Type TransistorsNPN TransistorsMMDT3904 (KMDT3904) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Con

MMDT3904DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 225 mWattVOLTAGEFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic

MMDT3904Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Ideal for low power amplification and switching. Ultra-small surface mount package Also available in lead free version. APPLICATIONS General switching and amplification SOT-363 MAXIMUM RATING @ Ta=25 unless otherwise specified SYMBOL PARAMETER VALUE UNITVCBO c

MMDT3904SG Double NPN TransistorsFeatures SOT-23-6 For switching and amplifier applications4.C25.E13.B26.C12.E2Equivalent Circuit 1.B1Marking Code3904Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 60 VCBOCollector Emitter Voltage V 40 VCEOEmitter Base Voltage

MMDT3904MMDT3904MMDT3904MMDT39 0 4 DUAL TRANSISTOR(NPN+ NPN)FEATURES SOT-363 Epitaxial planar die construction 6 Ideal for low power amplification and switching 541MAXIMUM RATINGS (Ta=25 unless otherwise noted)23Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 5 VIC Colle

RoHSCOMPLIANT MMDT3904Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPNMechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable perJ-STD-002 and JESD22-B102 Marking: K6NEquivalent circuit 1 / 5 S-S2843 Yangzhou Yangjie El

MMDT3904 MMDT3904 SOT-363 Plastic-Encapsulate Transistors General description SOT-363 Plastic-Encapsulate Transistors FEATURES DUAL TRANSISTOR (NPN+NPN) Epitaxial planar die construction Ideal for low power amplification and switching Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5

Epitaxial planar die construction Ideal for low power amplification and switching KAP Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.2 A Collector

MMDT3904DUAL TRANSISTORNPN+NPN0.2A, 40V, 60V SOT-363 Plastic-Encapsulate Transistors MMDT3904DUAL TRANSISTORNPN+NPNFEATURESEpitaxial planar die constructionIdeal for low power amplification and switchingMAXIMUM RATINGSTa=25 unless otherwise notedSymbol Parameter Value UnitsVCBOCollector-Base