MMDT5401DW Todos los transistores

 ..1. Size:1319K  cn cbi
 mmdt5401dw.pdf

Plastic-Encapsulate Transistors SOT-363 DUAL TRANSISTOR (PNP+PNP) FEATURES Complementary to MMDT5551DW Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING 2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter-Base Vo

 6.1. Size:374K  diodes
 mmdt5401.pdf

MMDT5401 150V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case SOT363 Complementary NPN Type Available (MMDT5551) Case Material Molded Plastic, Green Molding Compound, Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Packag

 6.2. Size:225K  mcc
 mmdt5401 sot-363.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT5401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Marking K4M Plastic-Encapsulate Ideal for Low Power Amplification and Switching Ultra-small Surface M

 6.3. Size:527K  secos
 mmdt5401.pdf

MMDT5401 Plastic-Encapsulate Elektronische Bauelemente Multi-Chip (PNP+PNP) Transistor RoHS Compliant Product SOT-363 o .055(1.40) 8 .047(1.20) 0o .026TYP Features (0.65TYP) .021REF (0.525)REF * Epitaxial Planar Die Construction .053(1.35) * Complementary NPN Type Available (MMDT5551) .096(2.45) .045(1.15) .085(2.15) .018(0.46) .010(0.26) C2 B1 E1 .014(0.35) .006(0.15

 6.4. Size:4388K  jiangsu
 mmdt5401.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5401 DUAL TRANSISTOR (PNP+PNP) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING K4M MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO

 6.5. Size:194K  lge
 mmdt5401.pdf

MMDT5401 Dual Transistor (NPN/PNP) SOT-363 Features Epitaxial Planar Die Construction Complementary NPN Type Available(MMDT 5551) Ideal for Medium Power Amplification and Switching MRKING K4M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Vol

 6.6. Size:385K  kexin
 mmdt5401.pdf

SMD Type Transistors PNP Transistors MMDT5401 (KMDT5401) Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Dual Transistors (PNP+PNP) Complementary NPN Type Available(MMDT 5551) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -

 6.7. Size:367K  cn yangzhou yangjie elec
 mmdt5401.pdf

RoHS COMPLIANT MMDT5401 Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K4M Equivalent circuit 1 / 5 S-S3208 Yangzhou