13001 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 13001 📄📄
Código: 8D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 9 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: SOT23
📄📄 Copiar
Búsqueda de reemplazo de 13001
- Selecciónⓘ de transistores por parámetros
13001 datasheet
..1. Size:483K htsemi
13001.pdf 
13001 TRANSISTOR (NPN) FEATURE power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit SOT-23 VCBO 700 V Collector -Base Voltage VCEO 400 V Collector-Emitter Voltage VEBO 9 V Emitter-Base Voltage IC Collector Current -Continuous 0.2 A 1. BASE PC Collector Power Dissipation 0.35 W 2. EMITTER TJ Junction Temper
..2. Size:1265K slkor
13001.pdf
13001 General Purpose Transistors NPN Silicon Product Summary VCEO 400V I c 0.2A PC 750mW SOT-23 MAXIMUM RATINGS (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Collector-Base Voltage 600 V VCBO Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO V 7 A Collector Current -Continuous IC 0.2 PC 0.75 W Power Dissipation Junction
..3. Size:1539K cn yongyutai
13001.pdf
13001 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 8 V Collector Current IC 200 mA Collector Power Dissipation PC 625 mW Th
..4. Size:299K cn fosan
13001.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 13001 SOT-23 Transistor FEATURES NPN Transistor NPN MAXIMUM RATINGS (T =25 ) a CHARACTERISTIC Symbol Rating Unit Collector-Base Voltage V 500 V CBO - Collect-Emitter Voltage V 400 V CEO
0.2. Size:191K utc
mje13001-p.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage V(BR)CBO=600V * Collector current IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B TO-92 B C E Tape Box MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K
0.3. Size:208K utc
mje13001.pdf
UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage V(BR)CBO=600V * Collector current IC=0.2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel - MJE13001G-x-AB3-F-R SOT-89 B C E Tape Reel MJE13001
0.5. Size:529K secos
3dd13001.pdf
3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B E C F Range 17 23 20 26 G H 1Base 1 1 1 3 2Collector 2 2 2 Emitter 3Emitter 3 3 3
0.6. Size:352K cdil
cd13001.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING (Ta =25 C ) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 500 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 9.0 V IC Collector Current Continuous 0.5 A ICM Peak
0.7. Size:632K jiangsu
3dd13001b.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE power switching applications TO-92 1. BASE 2. COLLECTOR 3. EMITTER Equivalent Circuit 13001 13001=Device code S 6B S 6B=Code 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 Bulk 1000pcs/Bag B-TA
0.8. Size:2110K jiangsu
3dd13001.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR (NPN) 1. BASE 2. COLLECTOR FEATURES Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Volta
0.9. Size:222K lge
3dd13001.pdf
3DD13001(NPN) TO-92 Bipolar Transistors TO-92 1. BASE 4.45 5.21 2. COLLECTOR 3. EMITTER 4.32 2.92 5.33 MIN Features power switching applications 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 Symbol Parameter Value Units 2.67 1.14 VCBO Collector -Base Voltage 600 V 1.40 2.03 VCEO Collector-Emitter Voltage 400 V 2.67 VEB
0.10. Size:46K hsmc
hmje13001.pdf
Spec. No. HA200213 HI-SINCERITY Issued Date 2002.06.01 Revised Date 2005.02.05 MICROELECTRONICS CORP. Page No. 1/4 HMJE13001 NPN Triple Diffused Planar Type High Voltage Transistor Description The HMJE13001 is a medium power transistor designed for use in switching applications. TO-92 Features High breakdown voltage Low collector saturation voltage Fast switch
0.14. Size:176K can-sheng
cs13001 to-92.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate T
0.15. Size:176K can-sheng
cs13001 to-92 ecb.pdf
ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd ShenZhen CanSheng Industry Development Co.,Ltd www.szcansheng.com ShenZhen CanSheng Industry Development Co.,Ltd. TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate T
0.16. Size:765K blue-rocket-elect
mje13001c1.pdf
MJE13001C1 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. / Applications , , High frequency electronic li
0.17. Size:182K crhj
3dd13001a1.pdf
NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
0.18. Size:182K crhj
3dd13001p.pdf
NPN R 3DD13001 P 3DD13001 P NPN VCEO 400 V IC 0.17 A Ptot Ta=25 0.6 W
0.19. Size:182K crhj
3dd13001 a1.pdf
NPN R 3DD13001 A1 3DD13001 A1 NPN VCEO 400 V IC 0.25 A Ptot Ta=25 0.8 W
0.24. Size:1188K kexin
mjd13001.pdf
SMD Type Transistors NPN Transistors MJD13001 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 Power switching applications 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 700 Collector - Emitter Voltage VCEO 400 V Emitter - Base
0.25. Size:590K kexin
3dd13001.pdf
SMD Type Transistors NPN Transistors 3DD13001 Features 1.70 0.1 Collector-emitter Voltage V(BR)CEO=400V Collector Current IC=0.2A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current -
0.26. Size:323K winsemi
sbn13001.pdf
SBN13001 SBN13001 SBN13001 SBN13001 High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter T
0.27. Size:238K foshan
mje13001e2.pdf
MJE13001E2(3DD13001E2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150
0.28. Size:237K foshan
mje13001e1.pdf
MJE13001E1(3DD13001E1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.45 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150
0.29. Size:243K foshan
mje13001de1.pdf
MJE13001DE1(3DD13001DE1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600
0.30. Size:163K foshan
mje13001b1.pdf
MJE13001B1(3DD13001B1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V
0.31. Size:153K foshan
mje13001a2.pdf
MJE13001A2(3DD13001A2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg
0.32. Size:170K foshan
mje13001c1.pdf
MJE13001C1(3DD13001C1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25 ) 1.0 W Tj 150 Tstg -55 150 /Electrical charac
0.33. Size:187K foshan
mje13001at.pdf
MJE13001AT(3DD13001AT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg
0.34. Size:147K foshan
mje13001a1.pdf
MJE13001A1(3DD13001A1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.8 W C T 150 j T -55 150 stg
0.35. Size:180K foshan
mje13001ct.pdf
MJE13001CT(3DD13001CT) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg
0.36. Size:188K foshan
mje13001c0.pdf
MJE13001C0(3DD13001C0) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit VCBO 600 V VCEO 400 V VEBO 9.0 V IC 0.25 A PC(Ta=25 ) 0.65 W Tj 150 Tstg -55 150 /Electrical chara
0.37. Size:180K foshan
mje13001c2.pdf
MJE13001C2(3DD13001C2) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.25 A C P (Ta=25 ) 1.0 W C T 150 j T -55 150 stg
0.38. Size:159K foshan
mje13001a0.pdf
MJE13001A0(3DD13001A0) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V CBO V 400 V CEO V 9.0 V EBO I 0.17 A C P (Ta=25 ) 0.5 W C T 150 j T -55 150 stg
0.39. Size:1361K slkor
13001s.pdf
13001S TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) Equivalent Circuit FEATURES Power switching applications TO-92 1EM ITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 8 V IC Collector Current -Continuous 0.2
0.40. Size:195K sunroc
alj13001.pdf
SUNROC ALJ13001 TRANSISTOR (NPN) TO-92 FEATURES 1. BASE power switching applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation
0.41. Size:3022K fuxinsemi
fs13001.pdf
FS13001 TRANSISTOR (NPN) TO 92 FEATURE power switching applications 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 13001 13001=Device code S 8D S 8D =Code 1 E C B MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO 600 V Collector -Base Voltage VCEO 420 V Collector-Emitter Voltage VEBO 7 V Emitter-Base Voltage
0.42. Size:6200K msksemi
ms13001.pdf
www.msksemi.com MS13001 Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURE power switching applications 1. BASE 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO 700 V Collector -Base Voltage VCEO 400 V Collector-Emitter Voltage VEBO 9 V Emitter-Base Voltage IC Collector Curr
Otros transistores... FHTA8550O-ME, FHTA8550Y-ME, FHTA8550G-ME, FHTA92-ME, FHTL8050O-ME, FHTL8050Y-ME, FHTL8050G-ME, FHTL8050M-ME, D880, 2SB649AD, 2SB649AD-B, 2SB649AD-C, 2SB649AD-D, 2SD1857D, 2SD1857D-P, 2SD1857D-Q, 2SD1857D-R
