2SB649AD-D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB649AD-D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 27 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar 2SB649AD-D
2SB649AD-D Datasheet (PDF)
2sb649ad.pdf
2SB649AD Rev.A May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features 2SD669AD Complementary pair with 2SD669AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni
2sb649 2sb649a.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 11SOT-223 SOT-89 APPLICATIONS 1* Low frequency power amplifier complementary pair with UTC 12SD669/A TO-252 TO-9211TO-126TO-92NL11TO-126STO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
2sb649a.pdf
2SB649, 2SB649ASilicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SD669/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SB649, 2SB649AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB649 2SB649A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCEO 120 160 VEmitter to base v
2sb649 2sb649a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit
2sb649 2sb649a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO:-120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected t
2sb649a-2sb649.pdf
2SB649/2SB649A(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.5007.4002.9001.100Symbol Parameter Value Units7.8001.500VCBO Collector-Base Voltage -180 V 3.9003.0004.100VCEO Collector-Emitter Voltage 3
2sb649-2sb649a to-126c.pdf
2SB649/2SB649A TO-126C Transistor (PNP)TO-126C1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -180 V 3.0007.8003.4008.200 1.800VCEO Collector-Emitter Voltage 2.2004.0402SB649 -120 V
2sb649 2sb649a.pdf
2SB649(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A)Complementary pair with 2SD669(A). / Applications Low frequency power amplifier. / Equivalent Circuit / Pin
2sb649am.pdf
RoHS RoHS 2SB649AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose PNP Power Transistor-1.5A / -120V, -160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SD669AM/2SD669AM-APNPEAll dimensions in millimeter
2sb649am-a.pdf
RoHS RoHS 2SB649AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose PNP Power Transistor-1.5A / -120V, -160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SD669AM/2SD669AM-APNPEAll dimensions in millimeter
2sb649a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-160V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669A APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
