2SA1182O Todos los transistores

 

2SA1182O Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1182O

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO236

 Búsqueda de reemplazo de 2SA1182O

- Selecciónⓘ de transistores por parámetros

 

2SA1182O datasheet

 7.1. Size:201K  toshiba
2sa1182.pdf pdf_icon

2SA1182O

2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC2859. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Col

 7.2. Size:906K  kexin
2sa1182.pdf pdf_icon

2SA1182O

SMD Type Transistors PNP Transistors 2SA1182 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-0.5A 1 2 Collector Emitter Voltage VCEO=-32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC2859. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

 8.1. Size:24K  hitachi
2sa1188 2sa1189.pdf pdf_icon

2SA1182O

2SA1188, 2SA1189 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1188 2SA1189 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to b

 8.2. Size:144K  jmnic
2sa1180.pdf pdf_icon

2SA1182O

JMnic Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS V

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , C945 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: 2SA1179M7

 

 

 


History: 2SA1179M7

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

3sk41 | 2sc2240 transistor | c3198 | 2sc793 | 2sd313 replacement | 2n4249 | a1013 transistor | 2sc2705

 

 

↑ Back to Top
.