BC817-16Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BC817-16Q /-25Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Featu

BC817-16Q /-40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Feature

BC817-16Q / -25Q / -40Q 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Description Mechanical Data Case: SOT23 This Bipolar Junction Transistor (BJT) is designed to meet the Case Material: Molded Plastic, Green Molding Compound; UL stringent requirements of Automotive Applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020

RoHS RoHSCOMPLIANT COMPLIANTBC817-16Q THRU BC817-40Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC81716LT1/DBC817-16LT1General Purpose TransistorsNPN SiliconBC817-25LT1COLLECTOR3BC817-40LT12BASE13EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VCollectorBase Voltage VCBO 50 V CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088BC817NPN general purpose transistor1999 Jun 01Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN general purpose transistor BC817FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BC817W series45 V, 500 mA NPN general-purpose transistorsRev. 7 11 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817W SOT323 - SC-70 BC807WBC817-16W BC807-16WB

BC817 series45 V, 500 mA NPN general-purpose transistorsRev. 7 18 June 2018 Product data sheet1 Product profile1.1 General descriptionNPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDEC JEITABC817 SOT23 TO-236AB - BC807BC817-16 BC807-16BC817-25 BC807-25

BC 817-16WNPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP)Type Marking Ordering Code Pin Configuration PackageBC 817-16W 6As Q62702-C2320 1 = B 2 = E 3 = C SOT-323BC 817-25W 6Bs Q62702-C2278 1 = B 2 = E 3 = C SOT-323BC 817-40W 6Cs Q6

BC817-16 / -25 / -40NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Ideally Suited for Automated Insertion Case: SOT-23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 For Switching, AF

BC817-16W / -25W / -40WLead-free GreenNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsSOT-323 Complementary PNP Types Available (BC807-xxW)Dim Min Max Lead Free By Design/RoHS Compliant (Note 1)AA0.25 0.40 "Green" Device (Note 2)CB1.15 1

BC817-16/-25/-40 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Types Available (BC807) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications

BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: molded plastic, Green molding compound Complementary PNP Types: BC807-xxW UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications Moi

BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epox

BC817-16MCCMicro Commercial ComponentsTM THRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC817-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Signal Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity L

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect

BC817-16LT1G,BC817-25LT1G,BC817-40LT1GGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector - Emitter Voltage VCEO 45 V3Collector - Base Voltage VCBO 50 VEmitter - Base Voltage VEBO 5.0 V12Collect

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

BC8 1 7 TRANSISTOR (NPN) BC817-16 BC817-25 BC817-40 SOT-23 FEATURES 1. BASE For general AF applications 2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50

BC817-16/-25/-40 NPN General Purpose AmplifierFEATURES 1. BASE For general AF application. A SOT-23 2. EMITTERDim Min Max Complementary PNP type available 3. COLLECTORA 2.70 3.10EBC807. B 1.10 1.50K B High collector current, high current gain. C 1.0 TypicalD 0.4 Typical Low collector-emitter saturation voltage. E 0.35 0.48JDG 1.80 2.00ORDERING

BC817-16/BC817-25BC817-40COLLECTOR3General Purpose Transistor3NPN Silicon11BASE2SOT-232EMITTER( T =25 C unless otherwise noted)M aximum R atings ARating SymbolUnitValueVCEO 45Collector-Emitter Voltage VdcVCBO VdcCollector-Base Voltage50VEBO Vdc5.0Emitter-Base VoltagemAdcCollector Current-Continuous IC500Thermal CharacteristicsChara

BC817 / BC818 NPN Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier application, These transistors are subdivided into three groups -16, -25, -40 according to their current gain. As complementary types, the PNP transistors BC807 and BC808 are recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollec

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC

LESHAN RADIO COMPANY, LTD.LBC817-16DMT1GLBC817-25DMT1GDual General Purpose TransistorsLBC817-40DMT1GNPN DualsS-LBC817-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-40DMT

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC817-16DPMT1GLBC817-25DPMT1GNPN/PNP DualsLBC817-40DPMT1G We declare that the material of product compliance with RoHS requirements.S-LBC817-16DPMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC817-25DPMT1GS-LBC

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC817-16LT1GLBC817-25LT1G We declare that the material of product compliance with RoHS requirements.LBC817-40LT1G3MAXIMUM RATINGSRating Symbol Value Unit 1CollectorEmitter Voltage V CEO 45 V 2CollectorBase Voltage V CBO 50 VSOT23 EmitterBase Voltage V EBO 5.0 VCollector Current Contin

LESHAN RADIO COMPANY, LTD.LBC817-16LT1GGeneral Purpose TransistorsLBC817-25LT1GLBC817-40LT1GNPN SiliconS-LBC817-16LT1GS-LBC817-25LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-40LT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAX

LESHAN RADIO COMPANY, LTD.General Purpose Transistors We declare that the material of product compliance with RoHS requirements.LBC817-16WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site S-LBC817-16WT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage V

BC817 SERIES General Purpose TransistorsBC817-16/25/40LGBC817-16LG,BC817-25LG,BC817-40LGSERIESFeatures 3 Pb-Free Packages are Available12Maximum RatingsRating Symbol Value UnitSOT-23Collector-Emitter Voltage VCEO 45 VCollector-Base Voltage VCBO 50 VCOLLECTOREmitter-Base Voltage VEBO 5.0 V 3Collector Current - Continuous IC 500 mAdc1BASE2EMITTERDevi

BC817 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 45 Volt POWER330 mWFEATURES General purpose amplifier applications0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)0.056(1.40)0.047(1.20)MECHANICA

PBC817-16-AU / BC817-25-AU / BC817-40-AU Silicon NPN General Purpose Transistors SOT-23 Unit: inch(mm) 45V 500mA Voltage Current Features Silicon NPN Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 Stan

General Purpose TransistorsBC817-16-G/25-G/40-G (NPN)RoHS DeviceFeatures -For general AF applications.SOT-23 -High collector current.0.119(3.00) -High current gain.0.110(2.80) -Low collector-emitter saturation voltage.30.056(1.40)Marking: 0.047(1.20)BC817-16-G: 6A1 20.006(0.15)BC817-25-G: 6B0.083(2.10)0.002(0.05)0.066(1.70)BC817-40-G: 6C0.044(1.10)

KBC817 16/25/40C N P N S i l i c o n T r a n s i s t o r 2018.03.02 2018.03.02 2018.03.02 2018.03.02 1 000 2018.03.02 AUK Dalian 1 KBC817 16/25/40C NPN Silicon Transistor Descriptions

BC817NPN Silicon Epitaxial Planar Transistors For general AF applications 1. BASE High collector current 2. EMITTER High current gain 3. COLLECTOR Low collector-emitter saturation voltage Complementary types: BC807 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 50

RUMW UMW BC817SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a

RoHS BC817- 16/ - 25/ 40BC817- 16/ - 25/ 40NPN EPTTAXIAL SILICON TRANSISTORSURFACE MOUNT SMALLSIGANL TRANSISTORSoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Emitter VoltageVCEO 45 VVEmitter-Base Voltage VCBO 50mACollector Current Ic 1000Peak Colteetor Current IcM mA1000Peak Fmitter Current IEM mA800oPDPower Dissipation

BC817-16/-25/-40NPN TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the PNP transistors BC817 arerecommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (TA=25, unless otherwisenoted)Parameter Symbol Valu

BC817-40 BC817-16 BC817-25 SOT-23 NPN Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current T-23 SO High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-B

HD ST0.3SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )FeaturesSOT- 23For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V CV Collector-Emitter Voltage 45 V CEOV Emitter

BC817SOT-23 Plastic-Encapsulate TransistorSOT-23 BC817- 16 TRANSISTOR (NPN) BC817- 25 BC817- 40 FEATURES 1. BASE For general AF applications2. EMITTER High collector current 3. COLLECTOR High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton S

www.msksemi.comBC817-16/25/40Semiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)1. BASE 2. EMITTER For general AF applications 3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) hFE

Jingdao Microelectronics co.LTD BC817BC817SOT-23NPN TRANSISTOR3FEATURES For general AF applications High collector current High current gain 1 Low collector-emitter saturation voltage Complementary types: BC807 (PNP)21.BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted)2.EMITTER3.COLLECTORSy

BC817 SeriesTRANSISTOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 50 VCo

BC817 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC807 ; Complementary to BC807 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

BC817BC817BC817BC817BC8 17TRANSISTOR(NPN)FEATURE For general AF applications SOT-23 High collector current High current gain 1BASE Low collector-emitter saturation voltage 2EMITTER Complementary types: BC807 (PNP) 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage

RoHS COMPLIANT BC817-16 THRU BC817-40 NPN General Purpose Amplifier Features Capable of 0.3Watts(TA=25) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC817-16 6A BC817-25 6B BC817-40 6C Maximum Rating Item Symbol Unit Va

RoHS COMPLIANT BC817-16W THRU BC817-40W NPN General Purpose Amplifier Features Capable of 0.2Watts(TA=25) of Power Dissipation Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking:BC817-16W 6A BC817-25W 6B BC817-40W 6C Maximum Ratings (Ta=25 Unless

BC817 TRANSISTOR (NPN) 1. BASE 2. EMITTER For general AF applications3. COLLECTOR High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) a Collector-Base Voltage 50 V Collec

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC817FEATURES NPN Low Frequency AmplifierTransistorMAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageV 45 VCEOCollector-Base VoltageV 50 VCBO-Emitter-

BC817BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC807 High Collector Current Low Collector-emitter saturation voltage High current gain Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless o

Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsA Complementary Types Available (BC )SOT-23CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HMaximum