2SA1185 Todos los transistores

 ..1. Size:156K  jmnic
 2sa1185.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1185 DESCRIPTION With TO-3PN package High current capability Low collector saturation voltage APPLICATIONS High power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )

 ..2. Size:223K  inchange semiconductor
 2sa1185.pdf

isc Silicon PNP Power Transistor 2SA1185 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min.) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -0.8V(Max.)@ I = -7A CE(sat) C Good Linearity of h FE Large Collector Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio freq

 8.1. Size:201K  toshiba
 2sa1182.pdf

2SA1182 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity hFE (2) = 25 (min) at V = -6 V, I = -400 mA CE C Complementary to 2SC2859. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Col

 8.2. Size:24K  hitachi
 2sa1188 2sa1189.pdf

2SA1188, 2SA1189 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1188 2SA1189 Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to b

 8.3. Size:144K  jmnic
 2sa1180.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION With TO-3 package High power dissipations APPLICATIONS For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS V

 8.4. Size:166K  jmnic
 2sa1187.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1187 DESCRIPTION With MT-200 package High current capability APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS

 8.5. Size:145K  jmnic
 2sa1184.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1184 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

 8.6. Size:191K  jmnic
 2sa1186.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )

 8.7. Size:27K  sanken-ele
 2sa1186.pdf

LAPT 2SA1186 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Symbol Ratings Unit Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 ICBO VCB= 150V 100max A 9.6 2.0 VCBO 150 V IEBO VEB= 5V 100m

 8.8. Size:906K  kexin
 2sa1182.pdf

SMD Type Transistors PNP Transistors 2SA1182 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-0.5A 1 2 Collector Emitter Voltage VCEO=-32V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC2859. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collect

 8.9. Size:197K  cn sptech
 2sa1186o 2sa1186p 2sa1186y.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2837 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CBO V Collector-Emit

 8.10. Size:207K  inchange semiconductor
 2sa1180.pdf

isc Silicon PNP Power Transistor 2SA1180 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.11. Size:222K  inchange semiconductor
 2sa1187.pdf

isc Silicon PNP Power Transistor 2SA1187 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2838 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.12. Size:216K  inchange semiconductor
 2sa1184.pdf

isc Silicon PNP Power Transistor 2SA1184 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Complement to Type 2SC2824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-B

 8.13. Size:199K  inchange semiconductor
 2sa1186.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2837 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO