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BCP5416QTA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCP5416QTA
   Código: BCP5416
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: SOT223
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BCP5416QTA Datasheet (PDF)

 ..1. Size:424K  diodes
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BCP5416QTA

BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > 45V, 60V & 80V Case: SOT223 IC = 1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturat

 9.1. Size:153K  philips
bc635 bcp54 bcx54.pdf pdf_icon

BCP5416QTA

BC635; BCP54; BCX5445 V, 1 A NPN medium power transistorsRev. 07 4 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC635[2] SOT54 SC-43A TO-92 BC636BCP54 SOT223 SC-73 - BCP51BCX54 SOT89 SC-62 TO-243 BCX51[1] Valid for all available sele

 9.2. Size:48K  philips
bcp54 bcp55 bcp56 3.pdf pdf_icon

BCP5416QTA

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BCP54; BCP55; BCP56NPN medium power transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationNPN medium power transistors BCP54; BCP55; BCP56FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP

 9.3. Size:202K  fairchild semi
bcp54.pdf pdf_icon

BCP5416QTA

BCP54CECBSOT-223NPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switching circuits requiring collector currentsto 1.2 A. Sourced from Process 38.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 V3VCBO Collector-Base Voltage 45 VVEBO Emitter-Ba

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1706T-AN | BC848CW-G | 2SA815 | 3DG2413K | RT3YB7M | 2N2916DCSM

 

 
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