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2SA1186P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1186P
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 60 MHz
   Capacitancia de salida (Cc): 110 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO3P
     - Selección de transistores por parámetros

 

2SA1186P Datasheet (PDF)

 ..1. Size:197K  cn sptech
 2sa1186o 2sa1186p 2sa1186y.pdf pdf_icon

2SA1186P

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2837APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -150 VCBOV Collector-Emit

 7.1. Size:191K  jmnic
 2sa1186.pdf pdf_icon

2SA1186P

JMnic Product Specification Silicon PNP Power Transistors 2SA1186 DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

 7.2. Size:27K  sanken-ele
 2sa1186.pdf pdf_icon

2SA1186P

LAPT 2SA1186Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2837)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)SymbolSymbol Ratings Unit Conditions Ratings Unit0.24.80.415.60.1ICBO VCB=150V 100max A 9.6 2.0VCBO 150 VIEBO VEB=5V 100m

 7.3. Size:199K  inchange semiconductor
 2sa1186.pdf pdf_icon

2SA1186P

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1186DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2837Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

MOSTRAR MÁS

Otros transistores... 2SA1182 , 2SA1182O , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , BD140 , 2SA1186Y , 2SA1187 , 2SA1188 , 2SA1189 , 2SA119 , 2SA1190 , 2SA1191 , 2SA1193 .

History: 2SC6072 | 2N3204

 

 
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