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BFP182W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFP182W
   Código: RG*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.035 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 6000 MHz
   Capacitancia de salida (Cc): 0.34 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT343

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BFP182W Datasheet (PDF)

 ..1. Size:58K  siemens
bfp182w.pdf

BFP182W
BFP182W

BFP 182WNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182W RGs Q62702-F1502 1 = E 2 = C 3 = E 4 = B SOT-343Maximum RatingsParameter Symbol Values

 ..2. Size:545K  infineon
bfp182w.pdf

BFP182W
BFP182W

BFP182WLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA241 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling

 8.1. Size:60K  siemens
bfp182.pdf

BFP182W
BFP182W

BFP 182NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182 RGs Q62702-F1396 1 = C 2 = E 3 = B 4 = E SOT-143Maximum RatingsParameter Symbol Values Un

 8.2. Size:58K  siemens
bfp182r.pdf

BFP182W
BFP182W

BFP 182RNPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA fT = 8GHz F = 1.2dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFP 182R RGs Q62702-F1601 1 = E 2 = C 3 = E 4 = B SOT-143RMaximum RatingsParameter Symbol Values

 8.3. Size:550K  infineon
bfp182r.pdf

BFP182W
BFP182W

BFP182RLow Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at3 collector currents from 1 mA to 20 mA24 fT = 8 GHz, NFmin = 0.9 dB at 900 MHz1 Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin Configu

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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