BFP540 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP540
Código: AT*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 14 V
Tensión colector-emisor (Vce): 4.5 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 21000 MHz
Capacitancia de salida (Cc): 0.14 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: SOT343
Búsqueda de reemplazo de BFP540
- Selecciónⓘ de transistores por parámetros
BFP540 datasheet
bfp540.pdf
BFP540 Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier 3 Outstanding Gms = 21.5 dB at 1.8 GHz 2 4 Minimum noise figure NFmin = 0.9 dB at 1.8 GHz 1 Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling p
bfp540esd.pdf
BFP540ESD Surface mount robust silicon NPN RF bipolar transistor Product description The BFP540ESD is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fifth generation RF bipolar transistor family. Its ESD structure provides high robustness. It remains cost competitive without compromising on ease of use. Feature list Minimum noise
bfp540fesd.pdf
BFP540FESD Low Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier 3 2 Excellent ESD performance 4 1 typical value 1000 V (HBM) Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads Qualification report according to AEC-Q101 available ES
Otros transistores... BFP193W, BFP196, BFP405, BFP405F, BFP410, BFP420, BFP450, BFP520F, 2SC1815, BFP540ESD, BFP540FESD, BFP640, BFP640ESD, BFP650, BFP650F, BFP720, BFP720ESD
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
oc71 transistor | 2n3440 | bc550c | 2n3904 transistor datasheet | p75nf75 | d880 transistor | 2sc1845 | p60nf06



