BFP540 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP540
Código: AT*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 14 V
Tensión colector-emisor (Vce): 4.5 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 21000 MHz
Capacitancia de salida (Cc): 0.14 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT343
Búsqueda de reemplazo de transistor bipolar BFP540
BFP540 Datasheet (PDF)
bfp540.pdf
BFP540Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier3 Outstanding Gms = 21.5 dB at 1.8 GHz24 Minimum noise figure NFmin = 0.9 dB at 1.8 GHz 1 Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling p
bfp540esd.pdf
BFP540ESDSurface mount robust silicon NPN RF bipolar transistorProduct descriptionThe BFP540ESD is a low noise device based on a grounded emitter (SIEGET) that is partof Infineons established fifth generation RF bipolar transistor family. Its ESD structureprovides high robustness. It remains cost competitive without compromising on ease ofuse.Feature list Minimum noise
bfp540fesd.pdf
BFP540FESDLow Noise Silicon Bipolar RF Transistor For ESD protected high gain low noise amplifier32 Excellent ESD performance41 typical value 1000 V (HBM) Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads Qualification report according to AEC-Q101 availableES
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
