BFP720 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP720
Código: R9*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 13 V
Tensión colector-emisor (Vce): 4 V
Tensión emisor-base (Veb): 1.2 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 45000 MHz
Capacitancia de salida (Cc): 0.06 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SOT343
Búsqueda de reemplazo de transistor bipolar BFP720
BFP720 Datasheet (PDF)
bfp720.pdf
BFP720SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list High transition frequency fT = 45 GHz to enable low noise figure at high frequencies:NFmin= 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gma = 19.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 23 dBm at 5.5 GHz, 3 V, 13 mAProduct validationQual
bfp720esd.pdf
BFP720ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720ESD is a wideband RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,2 kV HBM ESD hardness Low noise figure NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 5 mA Hi
bfp720fesd.pdf
BFP720FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720FESD is a wideband RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,2 kV HBM ESD hardness High transition frequency fT = 45 GHz to enable low noise figure at high frequenci
bfp720f.pdf
BFP720FSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720F is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list High transition frequency fT = 45 GHz enables low noise figure at high frequencies:NFmin = 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gms = 21.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 21 dBm at 5.5 GHz, 3 V, 13 mAProduct validationQua
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
