BFP720ESD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP720ESD

Código: T3*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 4.9 V

Tensión colector-emisor (Vce): 4.2 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 43000 MHz

Capacitancia de salida (Cc): 0.05 pF

Ganancia de corriente contínua (hFE): 160

Encapsulados: SOT343

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BFP720ESD datasheet

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BFP720ESD

BFP720ESD SiGe C NPN RF bipolar transistor Product description The BFP720ESD is a wideband RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV HBM ESD hardness Low noise figure NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 5 mA Hi

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BFP720ESD

BFP720FESD SiGe C NPN RF bipolar transistor Product description The BFP720FESD is a wideband RF heterojunction bipolar transistor (HBT) with an integrated ESD protection. Feature list Unique combination of high end RF performance and robustness 21 dBm maximum RF input power, 2 kV HBM ESD hardness High transition frequency fT = 45 GHz to enable low noise figure at high frequenci

 8.2. Size:512K  infineon
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BFP720ESD

BFP720F SiGe C NPN RF bipolar transistor Product description The BFP720F is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list High transition frequency fT = 45 GHz enables low noise figure at high frequencies NFmin = 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gms = 21.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 21 dBm at 5.5 GHz, 3 V, 13 mA Product validation Qua

 8.3. Size:552K  infineon
 bfp720.pdf pdf_icon

BFP720ESD

BFP720 SiGe C NPN RF bipolar transistor Product description The BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list High transition frequency fT = 45 GHz to enable low noise figure at high frequencies NFmin= 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gma = 19.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 23 dBm at 5.5 GHz, 3 V, 13 mA Product validation Qual

MOSTRAR MÁS

Otros transistores... BFP540, BFP540ESD, BFP540FESD, BFP640, BFP640ESD, BFP650, BFP650F, BFP720, 8050, BFP720F, BFP720FESD, BFP740ESD, BFP740F, BFP740FESD, BFP760, BFP780, BFP840ESD