BFP720ESD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BFP720ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720ESD is a wideband RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,2 kV HBM ESD hardness Low noise figure NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 5 mA Hi

BFP720FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720FESD is a wideband RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power,2 kV HBM ESD hardness High transition frequency fT = 45 GHz to enable low noise figure at high frequenci

BFP720FSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720F is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list High transition frequency fT = 45 GHz enables low noise figure at high frequencies:NFmin = 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gms = 21.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 21 dBm at 5.5 GHz, 3 V, 13 mAProduct validationQua

BFP720SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list High transition frequency fT = 45 GHz to enable low noise figure at high frequencies:NFmin= 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gma = 19.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 23 dBm at 5.5 GHz, 3 V, 13 mAProduct validationQual