L8050PLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L8050PLT3G
Código: 80P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar L8050PLT3G
L8050PLT3G Datasheet (PDF)
l8050plt1g l8050plt3g l8050qlt1g l8050qlt3g l8050rlt1g l8050rlt3g l8050slt1g l8050slt3g.pdf
LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA
l8050plt1g l8050qlt1g l8050rlt1g l8050slt1g.pdf
LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA
l8050plt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050PLT1GSeriesNPN SiliconS-L8050PLT1GFEATURE Series High current capacity in compact package.IC = 0.8A.3 Epitaxial planar type. NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2and Control Change Requirements; AEC-Q101 Qualified and PP
l8050.pdf
L8050(BR3DA8050K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , L8550(BR3CA8550K) High PC and IC, complementary pair with L8550(BR3CA8550K). / Applications 2W 2W output amplifier of portable radios in cl
l8050m.pdf
L8050M Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features L8550M Complementary pair with L8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinning 3 2
l8050hqlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and
l8050hplt1g.pdf
LESHAN RADIO COMPANY, LTD.L8050HQLTIGGeneral Purpose TransistorsSeriesNPN Silicon S-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050H Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2and Control Change Requirements; AEC-Q101 Qualified and
l8050hslt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGNPN SiliconSeriesS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P
l8050hrlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P
l8050hplt1g l8050hqlt1g l8050hrlt1g l8050hslt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P
l8050qlt1g.pdf
LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA
fhtl8050-me.pdf
FHTL8050-MENPN Transistor DESCRIPTIONSSOT-23 NPN NPN transistor in a SOT-23 Plastic Package. APPLICATIONSGeneral purpose application,switching. PIN ASSIGNMENT1 BASE2 EMITTER3 COLLECTOR Equivalent Circuit Name rule Name Addition
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BD238 | KSD227O
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