2SA1198 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1198
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 80 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 135 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SA1198
2SA1198 Datasheet (PDF)
2sa1199.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1193.pdf
2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak
2sa1190 2sa1191.pdf
2SA1190, 2SA1191Silicon PNP EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SC2855 and 2SC2856OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1190, 2SA1191Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1190 2SA1191 UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEm
2sa1193k.pdf
2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak
2sa1194.pdf
2SA1194(K)Silicon PNP EpitaxialApplicationHigh gain amplifierOutlineTO-126 MOD231. Emitter2. Collector3. Base1231Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 1 ACollector peak current IC(peak) 2 AC
2sa1195.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION With TO-202 package High power dissipation Complement to type 2SC2483 APPLICATIONS For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-202) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYM
2sa1195.pdf
isc Silicon PNP Power Transistor 2SA1195DESCRIPTIONLow Collector Saturation VoltageHigh voltageComplement to Type 2SC2483Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Co
Otros transistores... 2SA1190 , 2SA1191 , 2SA1193 , 2SA1194 , 2SA1194K , 2SA1195 , 2SA1196 , 2SA1197 , 2SC4793 , 2SA1198S , 2SA1199 , 2SA1199S , 2SA12 , 2SA120 , 2SA1200 , 2SA1201 , 2SA1202 .
