L9013RLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L9013RLT3G
Código: 13R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar L9013RLT3G
L9013RLT3G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013plt1g l9013plt3g l9013qlt1g l9013qlt3g l9013rlt1g l9013rlt3g l9013slt1g l9013slt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
l9013rlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
l9013plt1g l9013qlt1g l9013rlt1g l9013slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013plt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013.pdf
LESHAN RADIO COMPANY, LTD.NPN Epitaxial Silicon L9013Transistor1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to L9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol
l9013slt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013qlt1g.pdf
L9013QLT1GS-L9013QLT1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: DNLS320A | SBC857BWT1G
History: DNLS320A | SBC857BWT1G
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D