L9013SLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L9013SLT3G
Código: 13S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar L9013SLT3G
L9013SLT3G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
l9013slt1g.pdf
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Site S-L9013PLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013plt1g l9013qlt1g l9013rlt1g l9013slt1g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013plt1g.pdf
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking
l9013.pdf
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LESHAN RADIO COMPANY, LTD.NPN Epitaxial Silicon L9013Transistor1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to L9012 Excellent hFE linearity.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol
l9013rlt1g.pdf
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9013PLT1GFEATUREWe declare that the material of product compliance with RoHS requirements. SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L9013PLT1G SeriesDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
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L9013QLT1GS-L9013QLT1GGeneral Purpose Transistors NPN Silicon1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.SOT232. DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Sh
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