LBC856ADW1T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC856ADW1T1G
Código: 3A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.38 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hFE): 125
Encapsulados: SOT363
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LBC856ADW1T1G datasheet
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LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 6 5 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A
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LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
Otros transistores... LBC848CLT3G, LBC848CPDW1T3G, LBC849BLT1G, LBC849BLT3G, LBC849CLT1G, LBC849CLT3G, LBC850BLT3G, LBC850CLT3G, 2N4401, LBC856ALT3G, LBC856BLT3G, LBC857ATT1G, LBC857BLT3G, LBC857CTT1G, LBC858BLT3G, LBC858CLT3G, LBC859BLT1G
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