LBC859CLT1G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC859CLT1G
Código: 4C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 4.5
pF
Ganancia de corriente contínua (hfe): 420
Paquete / Cubierta:
SOT-23
- Selección de transistores por parámetros
LBC859CLT1G
Datasheet (PDF)
9.1. Size:158K lrc
lbc858alt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit
9.2. Size:178K lrc
lbc858cdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which is65designed for low power surface mount applications.4We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A
9.3. Size:176K lrc
lbc857bdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23 Device Marking:SOT-36
9.4. Size:135K lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri
9.5. Size:276K lrc
lbc858cwt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. CWT1GFeaturesS-LBC856AWT1G, BWT1GWe declare that the material of product c
9.6. Size:235K lrc
lbc856blt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1LBC857CLT1G ESD Rating Human Body Model: >4000 VS-LBC857CLT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site3and Control
9.7. Size:158K lrc
lbc858blt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit
9.8. Size:176K lrc
lbc858bdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A
9.9. Size:176K lrc
lbc857cdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an
9.10. Size:278K lrc
lbc858bwt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purpose CWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.FeaturesS-LBC856AWT1G, BWT1GWe declare that the material of product c
9.11. Size:134K lrc
lbc857btt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri
9.12. Size:275K lrc
lbc857cwt1g.pdf 

LESHAN RADIO COMPANY, LTD.LBC856AWT1G, BWT1GGeneral Purpose TransistorsLBC857AWT1G, BWT1GCWT1GPNP SiliconLBC858AWT1G, BWT1GThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/S-LBC856AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. S-LBC857AWT1G, BWT1GFeaturesCWT1GWe declare t
9.14. Size:233K lrc
lbc856alt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch
9.15. Size:182K lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A
9.16. Size:403K lrc
lbc850clt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang
9.18. Size:402K lrc
lbc850blt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha
9.20. Size:404K lrc
lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang
9.21. Size:284K lrc
lbc857awt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconCWT1GThese transistors are designed for general purposeLBC858AWT1G, BWT1Gamplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount CWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesS-LBC857AWT1G, BWT1GWe declare that the
9.22. Size:194K lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an
9.23. Size:160K lrc
lbc857clt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC857CLT1G Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a
9.25. Size:148K lrc
lbc857blt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon Series Moisture Sensitivity Level: 1S-LBC857CLT1G ESD Rating Human Body Model: >4000 V SeriesESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other Applications Requiring Unique Site a
9.26. Size:158K lrc
lbc858clt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1G SeriesPNP SiliconS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site an
9.27. Size:182K lrc
lbc856bdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A
9.28. Size:278K lrc
lbc850bwt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846AWT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.3MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO VdcSOT323 /SC70
9.29. Size:278K lrc
lbc856bwt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product
9.30. Size:159K lrc
lbc857alt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a
9.31. Size:353K lrc
lbc856blt1g lbc856blt3g.pdf 

LBC856BLT1GS-LBC856BLT1GGeneral Purpose Transistors PNP Silicon1. FEATURESMoisture Sensitivity Level: 1SOT23(TO-236)ESD Rating Human Body Model: >4000 V Machine Model: >400 VWe declare that the material of product compliance with3COLLECTOR RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring1unique si
9.33. Size:279K lrc
lbc857bwt1g.pdf 

LESHAN RADIO COMPANY, LTD.LBC856AWT1G,BWT1GGeneral Purpose TransistorsLBC857AWT1G,BWT1GPNP SiliconCWT1GLBC858AWT1G,BWT1GThese transistors are designed for general purposeamplifier applications. They are housed in the SOT323/CWT1GSC70 which is designed for low power surface mountS-LBC856AWT1G,BWT1Gapplications.S-LBC857AWT1G,BWT1GFeaturesWe declare that the mat
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