LH8050QLT3G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LH8050QLT3G

Código: KEY

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 160

Encapsulados: SOT23

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LH8050QLT3G datasheet

 ..1. Size:211K  lrc
 lh8050plt1g lh8050plt3g lh8050qlt1g lh8050qlt3g.pdf pdf_icon

LH8050QLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and

 5.1. Size:211K  lrc
 lh8050qlt1g.pdf pdf_icon

LH8050QLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and

 5.2. Size:211K  lrc
 lh8050plt1g lh8050qlt1g.pdf pdf_icon

LH8050QLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE Series High current capacity in compact package. IC =1.5A. 3 Epitaxial planar type. NPN complement LH8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and 2 Control Change Requirements; AEC-Q101 Qualified and

 8.1. Size:237K  lrc
 lh8050plt1g.pdf pdf_icon

LH8050QLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8050PLT1G Series NPN Silicon S-LH8050PLT1G FEATURE High current capacity in compact package. Series IC =1.5A. Epitaxial planar type. NPN complement LH8050 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site and 1 Control Change Requirements; AEC-Q101 Qualified and PP

MOSTRAR MÁS

Otros transistores... LDTA143TET1G, LDTA143ZET1G, LDTA144EET1G, LDTA144WET1G, LDTC144WM3T5G, LDTD123YLT1G, LDTD123YLT3G, LH8050PLT3G, 2N5551, LH8550PLT3G, LH8550QLT3G, LMBT2222ADW1T3G, LMBT2222ALT3G, LMBT2222ATT3G, LMBT2907ALT3G, LMBT2907AWT3G, LMBT2907LT1G