LMBT3904WT3G Datasheet. Equivalente

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 lmbt3904wt1g lmbt3904wt3g.pdf

LMBT3904WT1G S-LMBT3904WT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic

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 lmbt3904wt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904W T1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904W T1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. 1 DEVICE MARKING AND RESISTOR

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 lmbt3904n3t5g.pdf

LMBT3904N3T5G S-LMBT3904N3T5G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT883 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mar

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 lmbt3904lt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURES LMBT3904LT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. S-LMBT3904LT1G 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable. DEVICE MARKING AND RESISTOR VALU

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 lmbt3904tt1g lmbt3904tt3g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1G RoHS requirements. S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking

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 lmbt3904lt1g lmbt3904lt3g s-lmbt3904lt1g s-lmbt3904lt3g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistor Pb-Free Package May be Available. The G-Suffix Denotes a LMBT3904LT1G Pb-Free Lead Finish S-LMBT3904LT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and 3 PPAP Capable

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 lmbt3904lt1g lmbt3904lt3g.pdf

LMBT3904LT1G S-LMBT3904LT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Devic

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 lmbt3904tt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Simplifies Circuit Design. We declare that the material of product compliance with LMBT3904TT1G RoHS requirements. S-LMBT3904TT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device Marking

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 lmbt3904dw1t1g lmbt3904dw1t3g.pdf

LMBT3904DW1T1G S-LMBT3904DW1T1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V Simplifi

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 lmbt3904dw1t1g.pdf

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin off of our popular LMBT3904DW1T1G SOT 23/SOT 323 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT 363 S-LMBT3904DW1T1G six leaded surface mount package. By putting two discrete devices in one package , this device is ideal fo

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 lmbt3904lt1g.pdf

isc Silicon NPN RF Transistor LMBT3904LT1G DESCRIPTION Low Noise Figure NF = 5 dB(MAX) @V =5.0V, f=10Hz to 15.7kHz, I =100uA, R =1.0k CE C S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER