2SA1012B Datasheet. Equivalente

 ..1. Size:742K  jiangsu
 2sa1012b.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012B TRANSISTOR (PNP) FEATURES TO-252-2L -2A,-50V Middle Power Transistor Suitable for Middle Power Driver Low Collector-emitter saturation voltage APPLICATIONS 1. BASE Middle Power Driver 2. COLLECTOR LED Driver Power Supply 3. EMITTER MARKING A1012B= Dev

 7.1. Size:215K  toshiba
 2sa1012.pdf

 7.2. Size:343K  utc
 2sa1012.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low Collector Saturation Voltage V =-0.4V(max.) At I =-3A CE(SAT) C *High Speed Switching Time t =1.0 s (Typ.) S *Complementary To 2SC2562 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1012L-x-TA3-

 7.3. Size:116K  mospec
 2sa1012.pdf

A A A

 7.4. Size:1282K  jiangsu
 2sa1012.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) FEATURES High Current Switching Applications. Low Collector Saturation Voltage High Speed Swithing Time 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base

 7.5. Size:119K  jmnic
 2sa1012.pdf

Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features B C E With TO-220 package Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissip

 7.6. Size:318K  lge
 2sa1012.pdf

2SA1012(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Coll

 7.7. Size:583K  semtech
 st2sa1012.pdf

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collec

 7.8. Size:226K  lzg
 2sa1012 3ca1012.pdf

2SA1012(3CA1012) PNP /SILICON PNP TRANSISTOR Purpose High current switching applications. , , 2SC2562(3DA2562) Features Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). /Absolute maximum ratings(Ta=25 )

 7.9. Size:196K  inchange semiconductor
 2sa1012-d.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012-D DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -3A CE(sat) C High Switching Speed TO-252 Package -D = Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 7.10. Size:242K  inchange semiconductor
 2sa1012.pdf

isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION Low Collector Saturation Voltage V = -0.4(V)(Max)@I = -3A CE(sat) C High Switching Speed Complement to Type 2SC2562 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )