2SA1209R. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SA1209R datasheet

7.1. Size:43K sanyo
2sa1209 2sc2911 2sc2911.pdf pdf_icon

Ordering number ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009B Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5

7.2. Size:119K sanyo
2sa1209.pdf pdf_icon

Ordering number EN779C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009A Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. Switching Test Circuit IC=10IB1= 10IB2=10mA

7.3. Size:208K jmnic
2sa1209.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION With TO-126 package Complement to type 2SC2911 High breakdown voltage Fast switching speed APPLICATIONS High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )

7.4. Size:215K inchange semiconductor
2sa1209.pdf pdf_icon

isc Silicon PNP Power Transistor 2SA1209 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE High Switching Speed Complement to Type 2SC2911 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM

Otros transistores... 2SA1207R , 2SA1207S , 2SA1207T , 2SA1208 , 2SA1208R , 2SA1208S , 2SA1208T , 2SA1209 , TIP31 , 2SA1209S , 2SA1209T , 2SA120A , 2SA121 , 2SA1210 , 2SA1210R , 2SA1210S , 2SA1210T .