2SA1209R
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1209R
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10
W
Tensión colector-base (Vcb): 180
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.14
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SA1209R
2SA1209R
Datasheet (PDF)
7.1. Size:43K sanyo
2sa1209 2sc2911 2sc2911.pdf
Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5
7.2. Size:119K sanyo
2sa1209.pdf
Ordering number:EN779CPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009A Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.Switching Test CircuitIC=10IB1=10IB2=10mA
7.3. Size:208K jmnic
2sa1209.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION With TO-126 package Complement to type 2SC2911 High breakdown voltage Fast switching speed APPLICATIONS High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)
7.4. Size:215K inchange semiconductor
2sa1209.pdf
isc Silicon PNP Power Transistor 2SA1209DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC2911Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching and AF 100W predriverapplications.ABSOLUTE MAXIMUM
Otros transistores... 2SA1207R
, 2SA1207S
, 2SA1207T
, 2SA1208
, 2SA1208R
, 2SA1208S
, 2SA1208T
, 2SA1209
, BC558
, 2SA1209S
, 2SA1209T
, 2SA120A
, 2SA121
, 2SA1210
, 2SA1210R
, 2SA1210S
, 2SA1210T
.