2SA1209T Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1209T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 180 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.14 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: TO126
Búsqueda de reemplazo de 2SA1209T
- Selecciónⓘ de transistores por parámetros
2SA1209T datasheet
2sa1209 2sc2911 2sc2911.pdf
Ordering number ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009B Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5
2sa1209.pdf
Ordering number EN779C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009A Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. Switching Test Circuit IC=10IB1= 10IB2=10mA
2sa1209.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION With TO-126 package Complement to type 2SC2911 High breakdown voltage Fast switching speed APPLICATIONS High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )
2sa1209.pdf
isc Silicon PNP Power Transistor 2SA1209 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE High Switching Speed Complement to Type 2SC2911 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM
Otros transistores... 2SA1207T , 2SA1208 , 2SA1208R , 2SA1208S , 2SA1208T , 2SA1209 , 2SA1209R , 2SA1209S , 2SD313 , 2SA120A , 2SA121 , 2SA1210 , 2SA1210R , 2SA1210S , 2SA1210T , 2SA1211 , 2SA1213 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
bf494 | 2sc1885 | skd502t | 2sb754 | 2sc2362 | 2sd468 | c2240 transistor | 2sc1918