2SA1209T Todos los transistores

 

2SA1209T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1209T
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 180 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.14 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar 2SA1209T

 

2SA1209T Datasheet (PDF)

 7.1. Size:43K  sanyo
2sa1209 2sc2911 2sc2911.pdf

2SA1209T
2SA1209T

Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5

 7.2. Size:119K  sanyo
2sa1209.pdf

2SA1209T
2SA1209T

Ordering number:EN779CPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009A Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.Switching Test CircuitIC=10IB1=10IB2=10mA

 7.3. Size:208K  jmnic
2sa1209.pdf

2SA1209T
2SA1209T

JMnic Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION With TO-126 package Complement to type 2SC2911 High breakdown voltage Fast switching speed APPLICATIONS High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)

 7.4. Size:215K  inchange semiconductor
2sa1209.pdf

2SA1209T
2SA1209T

isc Silicon PNP Power Transistor 2SA1209DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC2911Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching and AF 100W predriverapplications.ABSOLUTE MAXIMUM

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top

 


2SA1209T
  2SA1209T
  2SA1209T
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top