2N6517BU Todos los transistores

 ..1. Size:240K  onsemi
 2n6517bu 2n6517ta 2n6517cta.pdf

NPN Epitaxial Silicon Transistor 2N6517 Features High Voltage Transistor www.onsemi.com Collector Dissipation PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25 C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector-Base Voltage V 1 1 2 2

 8.1. Size:329K  motorola
 2n6515 2n6516 2n6517 2n6519 2n6520.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector Em

 8.2. Size:229K  motorola
 2n6515 2n6517 2n6519 2n6520.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector Emitter Voltage VCEO 250 300 350 Vdc Collector

 8.3. Size:175K  fairchild semi
 2n6517.pdf

August 2010 2N6517 NPN Epitaxial Silicon Transistor Features High Voltage Transistor Collector Dissipation PC(max) = 625mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Vo

 8.4. Size:21K  samsung
 2n6517.pdf

2N6517 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 Collector-Emitter Voltage VCEO=350V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 6 V Collector Current IC 500 mA Collector Dissipation PC 625 mW

 8.5. Size:116K  onsemi
 2n6515 2n6517 2n6520.pdf

NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http //onsemi.com Voltage and Current are Negative for PNP Transistors COLLECTOR These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage V

 8.6. Size:240K  onsemi
 2n6517.pdf

NPN Epitaxial Silicon Transistor 2N6517 Features High Voltage Transistor www.onsemi.com Collector Dissipation PC(max) = 625 mW Complement to 2N6520 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25 C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector-Base Voltage V 1 1 2 2

 8.7. Size:130K  secos
 2n6517.pdf

2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage Transistors G H Complement of the 2N6520 Emitter Base J Collector A D Millimeter B REF. Collector Min. Max. A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.8

 8.8. Size:365K  jiangsu
 2n6517.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2N6517 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE Complement to 2N6520 3. COLLECTOR Equivalent Circuit

 8.9. Size:160K  first silicon
 2n6517.pdf

SEMICONDUCTOR 2N6517 TECHNICAL DATA B C 2N6517 TRANSISTOR (NPN) DIM MILLIMETERS A 4.70 MAX E FEATURES G B 4.80 MAX C 3.70 MAX D Complement To 2N6520 D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 0.50 L 2.30 F F M 0.51 MAX 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR TO-92 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto

 8.10. Size:264K  foshan
 2n6517m 3cg6517m.pdf

2N6517M(3CG6517M) NPN /SILICON NPN TRANSISTOR /Purpose High voltage application. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 350 V CBO V 350 V CEO V 6.0 V EBO I 500 mA C P 300 mW C T 150 j T -55 150 stg /Electrical characteristics(T