2SA1962RTU. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SA1962RTU datasheet

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2sa1962rtu 2sa1962otu fja4213rtu fja4213otu.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:129K toshiba
2sa1962.pdf pdf_icon

2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit mm High breakdown voltage VCEO = -230 V (min) Complementary to 2SC5242 Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -230 V Colle

7.2. Size:478K fairchild semi
2sa1962 fja4213.pdf pdf_icon

January 2009 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A TO-3P High Power Dissipation 130watts 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Excel

7.3. Size:231K jmnic
2sa1962.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION With TO-3P(I) package Complement to type 2SC5242 High collector voltage VCEO=-230V(Min) APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.