BC640TA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC636/DHigh Current TransistorsBC636PNP SiliconBC638COLLECTORBC64023BASE1EMITTER1MAXIMUM RATINGS23BC BC BC636 638 640Rating Symbol UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 60 80 VdcCollectorBase Voltage VCBO 45 60 80 VdcEmitt

BC640; BCP53; BCX5380 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC640[2] SOT54 SC-43A TO-92 BC639BCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56[1] Valid for all available

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC636; BC638; BC640PNP medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 07Philips Semiconductors Product specificationPNP medium power transistors BC636; BC638; BC640FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

BC636/638/640Switching and Amplifier Applications Complement to BC635/637/639TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC636 -45 V: BC638 -60 V: BC640 -100 VVCES Collector-Emitter Voltage : BC636 -45 V: BC6

March 2009BC640PNP Epitaxial Silicon TransistorSwitching and Amplifier Applications Complement to BC639TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K -100 VVCES Collector-Emitter Voltage -100 VVCEO Collector-Emitter Voltage -80 VVEBO Emitter-Base Vo

BC640; BCP53; BCX5380 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC640[2] SOT54 SC-43A TO-92 BC639BCP53 SOT223 SC-73 - BCP56BCX53 SOT89 SC-62 TO-243 BCX56[1] Valid for all available

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC636 VCER -45 Vat RBE=1Kohm :BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCES -45 V:BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCE

BC640-016GHigh Current TransistorsPNP SiliconFeatures This is a Pb-Free Device http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -80 VdcCollector-Base Voltage VCBO -80 Vdc1Emitter-Base Voltage VEBO -5.0 Vdc EMITTERCollector Current - Continuous IC -0.5 AdcTotal Device Dissipation @ TA = 25C PD 625 mWDerat

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC636 / BC638 / BC640 TRANSISTOR (PNP)TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTORBC636 BC638 BC6403. BASE XXX XXX XXX1 1 1Equivalent Circuit BC636,BC638,BC640=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Co

BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters)VEBO Emitter-