BC640TA Todos los transistores

 ..1. Size:289K  onsemi
 bc640ta.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:116K  motorola
 bc636 bc638 bc640.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC636/D High Current Transistors BC636 PNP Silicon BC638 COLLECTOR BC640 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 636 638 640 Rating Symbol Unit CASE 29 04, STYLE 14 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 60 80 Vdc Collector Base Voltage VCBO 45 60 80 Vdc Emitt

 9.2. Size:136K  philips
 bc640 bcp53 bcx53.pdf

BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BC640[2] SOT54 SC-43A TO-92 BC639 BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 [1] Valid for all available

 9.3. Size:49K  philips
 bc636 bc638 bc640 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 07 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLI

 9.4. Size:38K  fairchild semi
 bc636 bc638 bc640.pdf

BC636/638/640 Switching and Amplifier Applications Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K BC636 -45 V BC638 -60 V BC640 -100 V VCES Collector-Emitter Voltage BC636 -45 V BC6

 9.5. Size:106K  fairchild semi
 bc640.pdf

March 2009 BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K -100 V VCES Collector-Emitter Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Vo

 9.6. Size:136K  nxp
 bc640 bcp53 bcx53.pdf

BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA JEDEC BC640[2] SOT54 SC-43A TO-92 BC639 BCP53 SOT223 SC-73 - BCP56 BCX53 SOT89 SC-62 TO-243 BCX56 [1] Valid for all available

 9.7. Size:51K  samsung
 bc636 bc638 bc640.pdf

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage BC636 VCER -45 V at RBE=1Kohm BC638 -60 V BC640 -100 V Collector Emitter Voltage BC636 VCES -45 V BC638 -60 V BC640 -100 V Collector Emitter Voltage BC636 VCE

 9.8. Size:92K  onsemi
 bc640-016g.pdf

BC640-016G High Current Transistors PNP Silicon Features This is a Pb-Free Device http //onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -80 Vdc 1 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -0.5 Adc Total Device Dissipation @ TA = 25 C PD 625 mW Derat

 9.9. Size:115K  cdil
 bc635 bc636 bc637 bc638 bc639 bc640.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCE

 9.10. Size:473K  jiangsu
 bc636 bc638 bc640.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636 / BC638 / BC640 TRANSISTOR (PNP) TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR BC636 BC638 BC640 3. BASE XXX XXX XXX 1 1 1 Equivalent Circuit BC636,BC638,BC640=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Co

 9.11. Size:226K  lge
 bc636 bc638 bc640.pdf

BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters) VEBO Emitter-