2SA1215P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1215P
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 400 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: MT200
Búsqueda de reemplazo de transistor bipolar 2SA1215P
2SA1215P Datasheet (PDF)
2sa1215.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION With MT-200 package Complement to type 2SC2921 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO
2sa1215.pdf
LAPT 2SA1215Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 160 V ICBO VCB=160V 100max A0.224.42.1VCEO 160 V IEBO VEB=
2sa1215 2sc2921.pdf
Complementary NPN-PNP Power Bipolar Transistor R2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltageV =160V (min) CEO CEO NPN-PNP Complementary NPN-
2sa1215.pdf
isc Silicon PNP Power Transistor 2SA1215DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2921Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050