2SA1216G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1216G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 180 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 17 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 40 MHz
Capacitancia de salida (Cc): 500 pF
Ganancia de corriente contínua (hFE): 90
Encapsulados: MT200
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2SA1216G datasheet
2sa1216.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1216 DESCRIPTION With MT-200 package Complement to type 2SC2922 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO
2sa1216.pdf
LAPT 2SA1216 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Application Audio and General Purpose Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Symbol Ratings Unit SymboI Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 180 V VCBO VCB= 180V 100max A 0.2 24.4 2.1 0.1 VCEO 180 V IEBO
2sa1216.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2922 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 )
Otros transistores... 2SA1211 , 2SA1213 , 2SA1214 , 2SA1215 , 2SA1215O , 2SA1215P , 2SA1215Y , 2SA1216 , D209L , 2SA1216O , 2SA1216P , 2SA1216Y , 2SA1217 , 2SA1218 , 2SA1219 , 2SA122 , 2SA1220 .
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