BD13716S Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD13716S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO-126
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BD13716S datasheet
9.1. Size:100K motorola
bd135 bd137 bd139.pdf 
Order this document MOTOROLA by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 Plastic Medium Power Silicon BD139 NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc NPN SILICON BD 135, 137, 139 are complementary with
9.2. Size:49K philips
bd135 bd137 bd139 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to m
9.3. Size:44K st
bd135 bd137 bd139.pdf
BD135 BD137/BD139 NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are the BD136 1 2 BD138 and BD140. 3 SOT-32 INTERNAL SCHEMATIC
9.4. Size:41K fairchild semi
bd135 bd137 bd139.pdf
BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD135 45 V BD137 60 V BD139 80 V VCEO Collector-Emitter Voltage BD135
9.5. Size:51K samsung
bd135 bd137 bd139.pdf
BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD135 VCBO 45 V BD137 60 V BD139 80 V Collector Emitter Voltage BD135 VCEO 45 V BD137 60 V BD139 80 V 1. Emitter 2.Collector 3.Bas
9.6. Size:128K onsemi
bd135g bd137g bd139g.pdf
BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features 1.5 A POWER TRANSISTORS High DC Current Gain NPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14
9.7. Size:196K onsemi
bd135 bd137 bd139.pdf
BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method BD13516S BD135-16 Bulk BD1356STU BD135-6 BD13510STU BD135-10 BD13516STU BD135-16 Rail BD13716STU BD137-16 BD13710
9.8. Size:80K onsemi
bd139g bd135tg bd135g bd137g.pdf
BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features 1.5 A POWER TRANSISTORS High DC Current Gain NPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14
9.9. Size:109K utc
bd137.pdf
UNISONIC TECHNOLOGIES CO., LTD BD137 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) * Low voltage (max.60V) 1 TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BD137L-xx-T60-K BD137G-xx-T60-K TO-126 E C B Bulk BD137L-xx-T60-K (1) K Bulk (1)Packing Type (2) T60 TO-126 (2)Pa
9.10. Size:80K secos
bd135-bd137-bd139.pdf
BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE (1) A Product-Rank BD135-6 BD135-10 BD135-16 B E F Product-Rank BD13
9.11. Size:246K cdil
bd135 bd137 bd139.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD135 BD137 BD139 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Col
9.12. Size:931K jiangsu
bd135 bd137 bd139.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135 / BD137 / BD139 TRANSISTOR (NPN) TO 126 FEATURES 1. EMITTER High Current Complement To BD136, BD138 And BD140 2. COLLECTOR 3. BASE Equivalent Circuit BD135 BD137 BD139 XX XX XX BD135,BD137,BD139=Device code Solid dot = Green molding compound device, if none,
9.13. Size:191K lge
bd135 bd137 bd139.pdf
BD135/BD137/BD139(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(1.5A) Low Voltage(80V) 2.500 7.400 Dimensions in inches and (millimeters) 2.900 1.100 MAXIMUM RATINGS (TA=25 unless otherwise noted ) 7.800 1.500 Va3.900 lue 3.000 Symbol Parameter 4.100 Units 3.200 BD135 BD137 BD139 10.600 0.000 11.000 0
9.14. Size:329K wietron
bd135 bd137 bd139.pdf
BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol BD135 BD137 BD139 Unit VCBO 45 60 80 V Collector-Emitter Voltage VCEO 45 60 80 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 5.0 V Collector Current IC 1.5 A PD 1.25 W Power Disspation Tj 150 C Ju
9.15. Size:454K semtech
stbd135t stbd137t stbd139t.pdf
BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139T Collector Emitter Voltage VCEO 45 60 80 V Collector Emitter Voltage ( RBE = 1 K ) VCER 45 60 100 V Collector Base Vo
9.17. Size:207K inchange semiconductor
bd137.pdf
isc Silicon NPN Power Transistor BD137 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 0.15A FE C Collector-Emitter Sustaining Voltage - V = 60V(Min) CEO(SUS) Complement to type BD138 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi complement
9.18. Size:117K inchange semiconductor
bd135 bd137 bd139.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (T
Otros transistores... BD13516S, BD13516STU, BD1356STU, BD13610S, BD13610STU, BD13616S, BD13616STU, BD13710STU, D882, BD13716STU, BD13810STU, BD13816STU, BD13910S, BD13910STU, BD13916S, BD13916STU, BD1396STU
