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2SA1218 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1218

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: TO18

Búsqueda de reemplazo de transistor bipolar 2SA1218

 

2SA1218 Datasheet (PDF)

8.1. 2sa1217.pdf Size:95K _toshiba

2SA1218
2SA1218

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.2. 2sa1213.pdf Size:223K _toshiba

2SA1218
2SA1218

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max

 8.3. 2sa1210.pdf Size:274K _sanyo

2SA1218
2SA1218

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

8.4. 2sa1213-o.pdf Size:471K _mcc

2SA1218
2SA1218

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

 8.5. 2sa1213-y.pdf Size:471K _mcc

2SA1218
2SA1218

2SA1213-OMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth2SA1213-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

8.6. 2sa1217.pdf Size:201K _jmnic

2SA1218
2SA1218

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1217 DESCRIPTION With TO-126 package Complement to type 2SC2877 Good linearity of hFE APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Ba

8.7. 2sa1216.pdf Size:205K _jmnic

2SA1218
2SA1218

JMnic Product Specification Silicon PNP Power Transistors 2SA1216 DESCRIPTION With MT-200 package Complement to type 2SC2922 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

8.8. 2sa1215.pdf Size:203K _jmnic

2SA1218
2SA1218

JMnic Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION With MT-200 package Complement to type 2SC2921 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIO

8.9. 2sa1216.pdf Size:27K _sanken-ele

2SA1218

LAPT 2SA1216Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922)Application : Audio and General Purpose Electrical Characteristics (Ta=25C) External Dimensions MT-200 Absolute maximum ratings (Ta=25C)Symbol Ratings Unit SymboI Conditions Ratings Unit0.26.00.336.4VCBO 180 V VCBO VCB=180V 100max A0.224.42.10.1VCEO 180 V IEBO

8.10. 2sa1215.pdf Size:27K _sanken-ele

2SA1218

LAPT 2SA1215Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 160 V ICBO VCB=160V 100max A0.224.42.1VCEO 160 V IEBO VEB=

8.11. 2sa1213.pdf Size:183K _htsemi

2SA1218

2SA1 21 3TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V

8.12. 2sa1213.pdf Size:520K _willas

2SA1218
2SA1218

2SA1213-89 Plastic-Encapsulate TransistorsSOTTRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (T

8.13. st2sa1213u.pdf Size:688K _semtech

2SA1218
2SA1218

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollector C

8.14. 2sa1213.pdf Size:1604K _kexin

2SA1218
2SA1218

SMD Type TransistorsPNP Transistors 2SA12131.70 0.1FeaturesLow Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)High Speed Switching Time: tstg = 1.0us (typ.)Small Flat Package0.42 0.10.46 0.1PC = 1 to 2W (mounted on ceramic substrate)Complementary to 2SC28731.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

8.15. 2sa1213gp.pdf Size:138K _chenmko

2SA1218
2SA1218

CHENMKO ENTERPRISE CO.,LTD2SA1213GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 AmpereAPPLICATION* Power amplifier .FEATURESC-62/SOT-89* Small flat package. (SC-62/SOT-89)* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.0 to 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.1.7MAX. 0.4

8.16. 2sa1213y-g.pdf Size:143K _comchip

2SA1218
2SA1218

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other

8.17. 2sa1213o-g.pdf Size:143K _comchip

2SA1218
2SA1218

General Purpose Transistor2SA1213-G Series (PNP)RoHS DeviceFeatures1 : Base -Small flat package.2 : CollectorSOT-89-3L3 : Emitter -Power amplifier and switching -applications.0.181(4.60)0.173(4.40) -Low saturation voltage.0.061(1.55)REF. -High speed switching time.0.102(2.60) 0.167(4.25)0.091(2.30) 0.155(3.94)1 2 3Maximum Ratings (at TA=25C unless other

8.18. 2sa1217.pdf Size:214K _inchange_semiconductor

2SA1218
2SA1218

isc Silicon PNP Power Transistor 2SA1217DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -40V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2877Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching applications.Suitable for output stage of 5

8.19. 2sa1216.pdf Size:200K _inchange_semiconductor

2SA1218
2SA1218

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1216DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2922Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)

8.20. 2sa1214.pdf Size:208K _inchange_semiconductor

2SA1218
2SA1218

isc Silicon PNP Power Transistor 2SA1214DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE

8.21. 2sa1215.pdf Size:220K _inchange_semiconductor

2SA1218
2SA1218

isc Silicon PNP Power Transistor 2SA1215DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SC2921Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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