FJT44KTF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FJT44KTF
Código: FJT44
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: SOT223
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FJT44KTF Datasheet (PDF)
fjt44tf fjt44ktf.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fjt44.pdf

December 2009FJT44NPN Epitaxial Silicon TransistorFeatures High Voltage Transistor 321SOT-2231. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 6 VIC Collector Current 300 mAPC Collector Dissipation (TA
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SD1209 | L2SA812SLT3G | BSYP62 | BSX64 | D38L6 | FXT655 | GES3250A
History: 2SD1209 | L2SA812SLT3G | BSYP62 | BSX64 | D38L6 | FXT655 | GES3250A



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