KSA1015GRTA Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSA1015GRTA

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO92

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KSA1015GRTA datasheet

 ..1. Size:290K  onsemi
 ksa1015grta ksa1015yta.pdf pdf_icon

KSA1015GRTA

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:42K  fairchild semi
 ksa1015.pdf pdf_icon

KSA1015GRTA

KSA1015 LOW FREQUENCY AMPLIFIER Collector-Base Voltage VCBO= -50V Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -

 8.1. Size:55K  fairchild semi
 ksa1013.pdf pdf_icon

KSA1015GRTA

KSA1013 Color TV Audio Output Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1 A IB Base Current -0.5 A P

 8.2. Size:50K  fairchild semi
 ksa1010.pdf pdf_icon

KSA1015GRTA

KSA1010 High Speed High Voltage Switching Industrial Use Complement to KSC2334 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 7 A

MOSTRAR MÁS

Otros transistores... FJP1943OTU, FJP1943RTU, FJP5027, FJPF13009H1TU, FJPF13009H2TU, FJPF2145TU, FJT44KTF, FJT44TF, 2SB817, KSA1015YTA, KSC2383OTA, KSC2383YTA, KSC5338DW, KSC5502DTM, KSC5502DTTU, KSE45H1, KSE45H10