KSC5338DW Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC5338DW

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75 W

Tensión colector-base (Vcb): 1000 V

Tensión colector-emisor (Vce): 450 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 11 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 15

Encapsulados: D2PAK TO220

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KSC5338DW datasheet

 ..1. Size:506K  onsemi
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KSC5338DW

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:388K  fairchild semi
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KSC5338DW

May 2010 KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices TO-220 or D2-PAK Equivalent Circuit D2-PAK C 1 B TO-220 E 1 1.Base 2.Coll

 6.2. Size:153K  samsung
ksc5338d.pdf pdf_icon

KSC5338DW

KSC5338D NPN SILICON TRANSISTOR TO-220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 V Internal schematic diagram

 6.3. Size:257K  inchange semiconductor
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KSC5338DW

isc Silicon NPN Power Transistor KSC5338D DESCRIPTION Collector Emitter Sustaining Voltage V 450V(Min) CEO Low Collector Saturation Voltage V = 0.5V(Max.)@ I = 0.8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

Otros transistores... FJPF13009H2TU, FJPF2145TU, FJT44KTF, FJT44TF, KSA1015GRTA, KSA1015YTA, KSC2383OTA, KSC2383YTA, 13005, KSC5502DTM, KSC5502DTTU, KSE45H1, KSE45H10, KSE45H11, KSE45H2, KSE45H4, KSE45H5