KSC5502DTM Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSC5502DTM

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 87.83 W

Tensión colector-base (Vcb): 1200 V

Tensión colector-emisor (Vce): 600 V

Tensión emisor-base (Veb): 12 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 11 MHz

Capacitancia de salida (Cc): 60 pF

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO252

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KSC5502DTM datasheet

 ..1. Size:436K  onsemi
 ksc5502dtm ksc5502dttu.pdf pdf_icon

KSC5502DTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:435K  onsemi
 ksc5502d ksc5502dt.pdf pdf_icon

KSC5502DTM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.1. Size:137K  fairchild semi
 ksc5502d.pdf pdf_icon

KSC5502DTM

KSC5502D/KSC5502DT D-PAK Equivalent Circuit High Voltage Power Switch Switching C Application 1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices D-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absol

 7.1. Size:226K  fairchild semi
 ksc5502.pdf pdf_icon

KSC5502DTM

April 2008 KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application Small Variance in Storage Time Equivalent Circuit Wide Safe Operating Area C Suitable for Electronic Ballast Application B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TC=25 C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Vol

MOSTRAR MÁS

Otros transistores... FJPF2145TU, FJT44KTF, FJT44TF, KSA1015GRTA, KSA1015YTA, KSC2383OTA, KSC2383YTA, KSC5338DW, D209L, KSC5502DTTU, KSE45H1, KSE45H10, KSE45H11, KSE45H2, KSE45H4, KSE45H5, KSE45H7