KSC5502DTM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSC5502DTM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 87.83 W
   Tensión colector-base (Vcb): 1200 V
   Tensión colector-emisor (Vce): 600 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 11 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de transistor bipolar KSC5502DTM

KSC5502DTM Datasheet (PDF)

..1. Size:436K onsemi
ksc5502dtm ksc5502dttu.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

5.1. Size:435K onsemi
ksc5502d ksc5502dt.pdf

6.1. Size:137K fairchild semi
ksc5502d.pdf

KSC5502D/KSC5502DTD-PAKEquivalent CircuitHigh Voltage Power Switch Switching CApplication1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220E11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsol

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ksc5502.pdf

April 2008KSC5502NPN Planar Silicon TransistorHigh Voltage Power Switch Mode Application Small Variance in Storage TimeEquivalent Circuit Wide Safe Operating AreaC Suitable for Electronic Ballast Application B1 TO-220E1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsBVCBO Collector-Base Vol

7.2. Size:338K onsemi
ksc5502.pdf