KSP2907ATF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSP2907ATF
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92

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KSP2907ATF Datasheet (PDF)

..1. Size:307K onsemi
ksp2907abu ksp2907ata ksp2907atf ksp2907acta.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.1. Size:147K fairchild semi
ksp2907a.pdf

September 2006KSP2907AtmPNP General Purpose AmplifierFeatures Collector-Emitter Voltage: VCEO= 60V Collector Power Dissipation: PC (max)=625mW Suffix -C means a Center Collector (1.Emitter 2.Collector 3.Base)TO-92 Non suffix -C means a Side Collector (1.Emitter 2.Base 3.Collector) Available as PN2907A 1 2 3 KSP2907A : 1. Emitter 2. Base 3. Coll

6.2. Size:22K samsung
ksp2907apfc.pdf

KSP2907A PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 60V Collector Dissipation: PC(max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -60 VCollector-Emitter Voltage VCEO -60 VEmitter-Base Voltage VEBO -5 VCollector Current IC -600 mACollector Dissipation PC 6

6.3. Size:304K onsemi
ksp2907a.pdf